KSB795OSTU
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- Mfr.Part #
- KSB795OSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 1.5A TO126-3
- Stock
- 4,117
- In Stock ：
- 4,117
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1W
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Type :
- PNP - Darlington
- Current - Collector (Ic) (Max) :
- 1.5A
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4000 @ 1A 2V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Datasheets
- KSB795OSTU
PNP - Darlington 150°C TJ 10μA ICBO TO-225AA, TO-126-3 Tube Through Hole
KSB795OSTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 4000 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSB795OSTU Features
the DC current gain for this device is 4000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
KSB795OSTU Applications
There are a lot of ON Semiconductor
KSB795OSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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