KSB707RTU

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Mfr.Part #
KSB707RTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 60V 7A TO220-3
Stock
31,829
In Stock :
31,829

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 3A 1V
Supplier Device Package :
TO-220-3
Transistor Type :
PNP
Voltage - Collector Emitter Breakdown (Max) :
60V
Package / Case :
TO-220-3
Mounting Type :
Through Hole
Current - Collector (Ic) (Max) :
7A
Current - Collector Cutoff (Max) :
10μA ICBO
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Vce Saturation (Max) @ Ib, Ic :
500mV @ 500mA, 5A
Power - Max :
1.5W
Datasheets
KSB707RTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSB707RTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, KSB707RTU pinout, KSB707RTU datasheet PDF, KSB707RTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSB707RTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSB707RTU


PNP 10μA ICBO TO-220-3 Tube Through Hole

KSB707RTU Overview


In this device, the DC current gain is 40 @ 3A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 500mA, 5A.Supplier device package TO-220-3 comes with the product.The device exhibits a collector-emitter breakdown at 60V.

KSB707RTU Features


the DC current gain for this device is 40 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3


KSB707RTU Applications


There are a lot of ON Semiconductor
KSB707RTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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