KSB708RTU
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- Mfr.Part #
- KSB708RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 7A TO220-3
- Stock
- 22,660
- In Stock ：
- 22,660
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Current - Collector (Ic) (Max) :
- 7A
- Package / Case :
- TO-220-3
- Supplier Device Package :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power - Max :
- 1.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 3A 1V
- Mounting Type :
- Through Hole
- Datasheets
- KSB708RTU
PNP 10μA ICBO TO-220-3 Tube Through Hole
KSB708RTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 3A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 500mA, 5A.TO-220-3 is the supplier device package for this product.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
KSB708RTU Features
the DC current gain for this device is 40 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3
KSB708RTU Applications
There are a lot of ON Semiconductor
KSB708RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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