KSB772YSTSTU
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- Mfr.Part #
- KSB772YSTSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A TO126-3
- Stock
- 26,082
- In Stock ：
- 26,082
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Collector Emitter Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Frequency :
- 80MHz
- Max Power Dissipation :
- 1W
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -30V
- Base Part Number :
- KSB772
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 60
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- -300mV
- Radiation Hardening :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Weight :
- 758mg
- Gain Bandwidth Product :
- 80MHz
- Current Rating :
- -3A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 3A
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -40V
- Power Dissipation :
- 1W
- Datasheets
- KSB772YSTSTU
PNP 150°C TJ 1μA ICBO 1 Elements TO-225AA, TO-126-3 Tube Through Hole
KSB772YSTSTU Overview
This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 3A volts is possible.
KSB772YSTSTU Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
KSB772YSTSTU Applications
There are a lot of ON Semiconductor
KSB772YSTSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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