KSB772YSTSSTU
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- Mfr.Part #
- KSB772YSTSSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A TO126-3
- Stock
- 22,402
- In Stock ：
- 22,402
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Base Part Number :
- KSB772
- Frequency - Transition :
- 80MHz
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Current - Collector (Ic) (Max) :
- 3A
- Power - Max :
- 1W
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-225AA, TO-126-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Transistor Type :
- PNP
- Datasheets
- KSB772YSTSSTU
PNP 150°C TJ 1μA ICBO TO-225AA, TO-126-3 Tube Through Hole
KSB772YSTSSTU Overview
In this device, the DC current gain is 160 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
KSB772YSTSSTU Features
the DC current gain for this device is 160 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
KSB772YSTSSTU Applications
There are a lot of ON Semiconductor
KSB772YSTSSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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