KSB708YTU
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- Mfr.Part #
- KSB708YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 7A TO220-3
- Stock
- 39,587
- In Stock ：
- 39,587
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 3A 1V
- Power - Max :
- 1.5W
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 7A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Datasheets
- KSB708YTU
PNP 10μA ICBO TO-220-3 Tube Through Hole
KSB708YTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 3A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 500mA, 5A.The product comes in the supplier device package of TO-220-3.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.
KSB708YTU Features
the DC current gain for this device is 100 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3
KSB708YTU Applications
There are a lot of ON Semiconductor
KSB708YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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