KSB772YS
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- Mfr.Part #
- KSB772YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A TO126-3
- Stock
- 2,615
- In Stock ：
- 2,615
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Collector Current :
- 3A
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Collector Base Voltage (VCBO) :
- -40V
- Weight :
- 761mg
- Polarity/Channel Type :
- PNP
- Base Part Number :
- KSB772
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 80MHz
- Transition Frequency :
- 80MHz
- Frequency :
- 80MHz
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Current Rating :
- -3A
- Collector Emitter Saturation Voltage :
- -300mV
- Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -30V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- hFE Min :
- 60
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Published :
- 2002
- Datasheets
- KSB772YS
KSB772YS Documents
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSB772YS Overview
In this device, the DC current gain is 160 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
KSB772YS Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 80MHz
KSB772YS Applications
There are a lot of ON Semiconductor
KSB772YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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