KSB772YS
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- Mfr.Part #
- KSB772YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A TO126-3
- Stock
- 2,615
- In Stock ：
- 2,615
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSB772
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- -30V
- Published :
- 2002
- Gain Bandwidth Product :
- 80MHz
- Package / Case :
- TO-225AA, TO-126-3
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Base Voltage (VCBO) :
- -40V
- Number of Elements :
- 1
- Max Collector Current :
- 3A
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- PNP
- Power Dissipation :
- 1W
- Current Rating :
- -3A
- Collector Emitter Saturation Voltage :
- -300mV
- Pbfree Code :
- yes
- Weight :
- 761mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Transition Frequency :
- 80MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Application :
- AMPLIFIER
- Packaging :
- Bulk
- Frequency :
- 80MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- hFE Min :
- 60
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Datasheets
- KSB772YS
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSB772YS Overview
In this device, the DC current gain is 160 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
KSB772YS Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 80MHz
KSB772YS Applications
There are a lot of ON Semiconductor
KSB772YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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