KSB772YSTU

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Mfr.Part #
KSB772YSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 30V 3A TO126-3
Stock
2,020
In Stock :
2,020

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-225AA, TO-126-3
Collector Emitter Breakdown Voltage :
30V
Width :
3.25mm
Number of Terminations :
3
Collector Emitter Saturation Voltage :
-300mV
Weight :
761mg
Transition Frequency :
80MHz
Factory Lead Time :
18 Weeks
Collector Base Voltage (VCBO) :
-40V
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Gain Bandwidth Product :
80MHz
Packaging :
Tube
Number of Pins :
3
Terminal Finish :
Tin (Sn)
Transistor Type :
PNP
REACH SVHC :
No SVHC
Voltage - Rated DC :
-30V
Published :
2002
Height :
11mm
Collector Emitter Voltage (VCEO) :
30V
Operating Temperature :
150°C TJ
Polarity/Channel Type :
PNP
ECCN Code :
EAR99
Frequency :
80MHz
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 1A 2V
Number of Elements :
1
Current Rating :
-3A
Pbfree Code :
yes
Element Configuration :
Single
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Mounting Type :
Through Hole
Length :
8mm
Max Power Dissipation :
10W
Current - Collector Cutoff (Max) :
1μA ICBO
hFE Min :
60
Emitter Base Voltage (VEBO) :
-5V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Base Part Number :
KSB772
Radiation Hardening :
No
Power Dissipation :
1W
Transistor Application :
AMPLIFIER
Max Collector Current :
3A
JESD-609 Code :
e3
Datasheets
KSB772YSTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSB772YSTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Base Part Number:KSB772, KSB772YSTU pinout, KSB772YSTU datasheet PDF, KSB772YSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSB772YSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSB772YSTU


PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

KSB772YSTU Overview


This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 80MHz.The maximum collector current is 3A volts.

KSB772YSTU Features


the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 80MHz


KSB772YSTU Applications


There are a lot of ON Semiconductor
KSB772YSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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