KSB596YTU
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- Mfr.Part #
- KSB596YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A TO220-3
- Stock
- 229
- In Stock ：
- 229
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 3MHz
- Max Power Dissipation :
- 30W
- Voltage - Rated DC :
- -80V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Max Collector Current :
- 4A
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- -80V
- Height :
- 14.2mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- Transition Frequency :
- 3MHz
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 70μA ICBO
- Width :
- 4.5mm
- JESD-609 Code :
- e3
- hFE Min :
- 40
- Collector Emitter Saturation Voltage :
- -1V
- Collector Emitter Voltage (VCEO) :
- 80V
- Power Dissipation :
- 30W
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Weight :
- 1.8g
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 300mA, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- KSB596
- Radiation Hardening :
- No
- Published :
- 2000
- Factory Lead Time :
- 2 Weeks
- Length :
- 9.2mm
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Element Configuration :
- Single
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Current Rating :
- -4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 5V
- Polarity/Channel Type :
- PNP
- Datasheets
- KSB596YTU
PNP 150°C TJ 70μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
KSB596YTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.7V @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 4A volts.
KSB596YTU Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
KSB596YTU Applications
There are a lot of ON Semiconductor
KSB596YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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