KSB564ACOBU
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- Mfr.Part #
- KSB564ACOBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1A TO92-3
- Stock
- 38,329
- In Stock ：
- 38,329
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Current - Collector (Ic) (Max) :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 100mA 1V
- Frequency - Transition :
- 110MHz
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Type :
- PNP
- Base Part Number :
- KSB564
- Power - Max :
- 800mW
- Packaging :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Supplier Device Package :
- TO-92-3
- Datasheets
- KSB564ACOBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSB564ACOBU Overview
In this device, the DC current gain is 70 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.Product comes in the supplier's device package TO-92-3.There is a 25V maximal voltage in the device due to collector-emitter breakdown.
KSB564ACOBU Features
the DC current gain for this device is 70 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-92-3
KSB564ACOBU Applications
There are a lot of ON Semiconductor
KSB564ACOBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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