KSB546YTU
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- Mfr.Part #
- KSB546YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 2A TO220-3
- Stock
- 15,118
- In Stock ：
- 15,118
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 40
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current Rating :
- -2A
- Max Collector Current :
- 2A
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- -200V
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 150V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 400mA 10V
- Collector Emitter Breakdown Voltage :
- 150V
- Element Configuration :
- Single
- Frequency :
- 5MHz
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- -1V
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- -150V
- Max Power Dissipation :
- 25W
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 5MHz
- Operating Temperature :
- 150°C TJ
- Published :
- 2013
- Weight :
- 1.8g
- Power Dissipation :
- 25W
- JEDEC-95 Code :
- TO-220AB
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 5MHz
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Datasheets
- KSB546YTU
PNP 150°C TJ 50μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
KSB546YTU Overview
This device has a DC current gain of 120 @ 400mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 5MHz.A maximum collector current of 2A volts is possible.
KSB546YTU Features
the DC current gain for this device is 120 @ 400mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 5MHz
KSB546YTU Applications
There are a lot of ON Semiconductor
KSB546YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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