KSB564ACGTA
- Mfr.Part #
- KSB564ACGTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1A TO92-3
- Stock
- 29,725
- In Stock :
- 29,725
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 1A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power - Max :
- 800mW
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- MATTE TIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- JESD-30 Code :
- O-PBCY-T3
- Transition Frequency :
- 110MHz
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Terminal Position :
- BOTTOM
- Frequency - Transition :
- 110MHz
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- JESD-609 Code :
- e3
- Datasheets
- KSB564ACGTA

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSB564ACGTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 1V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 110MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.
KSB564ACGTA Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 110MHz
KSB564ACGTA Applications
There are a lot of Rochester Electronics, LLC
KSB564ACGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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