KSB564ACGBU

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Mfr.Part #
KSB564ACGBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 25V 1A TO92-3
Stock
19,488
In Stock :
19,488

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
Not Applicable
Configuration :
Single
Transistor Type :
PNP
Qualification Status :
COMMERCIAL
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Current - Collector (Ic) (Max) :
1A
Transition Frequency :
110MHz
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 1V
Operating Temperature :
150°C TJ
Terminal Finish :
MATTE TIN
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Current - Collector Cutoff (Max) :
100nA ICBO
Frequency - Transition :
110MHz
Polarity/Channel Type :
PNP
Terminal Position :
BOTTOM
JESD-609 Code :
e3
Transistor Application :
AMPLIFIER
Power - Max :
800mW
JESD-30 Code :
O-PBCY-T3
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Pbfree Code :
yes
Packaging :
Bulk
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Voltage - Collector Emitter Breakdown (Max) :
25V
Surface Mount :
No
Transistor Element Material :
SILICON
Datasheets
KSB564ACGBU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSB564ACGBU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), KSB564ACGBU pinout, KSB564ACGBU datasheet PDF, KSB564ACGBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSB564ACGBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSB564ACGBU


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

KSB564ACGBU Overview


DC current gain in this device equals 200 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.As a result, the part has a transition frequency of 110MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

KSB564ACGBU Features


the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 110MHz


KSB564ACGBU Applications


There are a lot of Rochester Electronics, LLC
KSB564ACGBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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