KSB546Y
- Mfr.Part #
- KSB546Y
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 2A TO220-3
- Stock
- 13,198
- In Stock :
- 13,198
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Single
- Transistor Application :
- AMPLIFIER
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Configuration :
- Single
- Frequency - Transition :
- 5MHz
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 2A
- Package / Case :
- TO-220-3
- Polarity/Channel Type :
- PNP
- Surface Mount :
- No
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Transition Frequency :
- 5MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 400mA 10V
- Power - Max :
- 25W
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- KSB546Y

PNP 150°C TJ 50μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Bulk Through Hole
KSB546Y Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 400mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.A transition frequency of 5MHz is present in the part.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.
KSB546Y Features
the DC current gain for this device is 120 @ 400mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 5MHz
KSB546Y Applications
There are a lot of ON Semiconductor
KSB546Y applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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