KSB596Y
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- Mfr.Part #
- KSB596Y
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A TO220-3
- Stock
- 25,625
- In Stock ：
- 25,625
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -80V
- Current Rating :
- -4A
- Current - Collector Cutoff (Max) :
- 70μA ICBO
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- -80V
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 30W
- Max Collector Current :
- 4A
- Transistor Type :
- PNP
- Transition Frequency :
- 3MHz
- RoHS Status :
- RoHS Compliant
- Gain Bandwidth Product :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 5V
- Base Part Number :
- KSB596
- JESD-30 Code :
- R-PSFM-T3
- Element Configuration :
- Single
- Max Power Dissipation :
- 30W
- Collector Emitter Saturation Voltage :
- -1V
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 300mA, 3A
- hFE Min :
- 40
- Transistor Element Material :
- SILICON
- Frequency :
- 3MHz
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 1.7V
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Number of Elements :
- 1
- Packaging :
- Bulk
- Weight :
- 1.8g
- Datasheets
- KSB596Y
PNP 150°C TJ 70μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Bulk Through Hole
KSB596Y Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.7V @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 4A volts.
KSB596Y Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
KSB596Y Applications
There are a lot of ON Semiconductor
KSB596Y applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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