KSB564AYBU
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- Mfr.Part #
- KSB564AYBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1A TO92-3
- Stock
- 12,627
- In Stock ：
- 12,627
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 110MHz
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Packaging :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Supplier Device Package :
- TO-92-3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Current - Collector (Ic) (Max) :
- 1A
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSB564AYBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSB564AYBU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.TO-92-3 is the supplier device package for this product.This device displays a 25V maximum voltage - Collector Emitter Breakdown.
KSB564AYBU Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-92-3
KSB564AYBU Applications
There are a lot of Rochester Electronics, LLC
KSB564AYBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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