IXTY90N055T2
- Mfr.Part #
- IXTY90N055T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 90A TO252
- Stock
- 49,760
- In Stock :
- 49,760
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0084Ohm
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- Package :
- Tube
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Pin Count :
- 4
- Additional Feature :
- AVALANCHE RATED
- Product Status :
- Active
- Package Shape :
- RECTANGULAR
- FET Feature :
- -
- Drain Current-Max (Abs) (ID) :
- 90A
- Number of Channels :
- 1 Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2770pF @ 25V
- Drain to Source Voltage (Vdss) :
- 55V
- Factory Lead Time :
- 24 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 21 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- Gull wing
- Power Dissipation-Max (Abs) :
- 150 W
- RoHS :
- Details
- Base Product Number :
- IXTY90
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Channel Mode :
- Enhancement
- Tradename :
- HiPerFET
- Product :
- Power MOSFET Modules
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 150W (Tc)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation-Max :
- 150W Tc
- DS Breakdown Voltage-Min :
- 55V
- Maximum Operating Temperature :
- + 175 C
- JEDEC-95 Code :
- TO-252AA
- Supplier Device Package :
- TO-252AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 2
- Rds On (Max) @ Id, Vgs :
- 8.4m Ω @ 25A, 10V
- ECCN Code :
- EAR99
- Series :
- TrenchT2™
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Type :
- Trench T2
- Product Category :
- MOSFET
- Number of Terminations :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Brand :
- IXYS
- Transistor Polarity :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 230A
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- SMD/SMT
- Datasheets
- IXTY90N055T2
N-Channel Tube 8.4m Ω @ 25A, 10V ±20V 2770pF @ 25V 42nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY90N055T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2770pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 90A.There is a peak drain current of 230A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 55V, it should remain above the 55V level.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTY90N055T2 Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 230A.
a 55V drain to source voltage (Vdss)
IXTY90N055T2 Applications
There are a lot of IXYS
IXTY90N055T2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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