IXTY90N055T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchT2™

Power Dissipation-Max :

150W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product :

Power MOSFET Modules

Number of Channels :

1 Channel

Product Category :

MOSFET

Supplier Device Package :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Channel Mode :

Enhancement

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Compliant

Number of Terminals :

2

Package :

Tube

Product Type :

MOSFET

Operating Temperature :

-55°C~175°C TJ

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

300 mJ

FET Feature :

-

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252AA

Package Shape :

RECTANGULAR

Mounting Style :

SMD/SMT

Rise Time :

21 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

90A

Surface Mount :

yes

Product Status :

Active

DS Breakdown Voltage-Min :

55V

Number of Terminations :

2

Manufacturer :

IXYS

Type :

Trench T2

Pin Count :

4

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

55V

Drain-source On Resistance-Max :

0.0084Ohm

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

150 W

Number of Elements :

1

Maximum Operating Temperature :

+ 175 C

Tradename :

HiPerFET

Brand :

IXYS

Base Product Number :

IXTY90

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

150W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

2770pF @ 25V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

230A

Minimum Operating Temperature :

- 55 C

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

24 Weeks