IXTY5N50P

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Mfr.Part #
IXTY5N50P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 4.8A TO252
Stock
47,180
In Stock :
47,180

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Number of Pins :
3
Gate to Source Voltage (Vgs) :
30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package Shape :
RECTANGULAR
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
4.8A Tc
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 25V
Polarity/Channel Type :
N-Channel
Package :
Tube
Continuous Drain Current (ID) :
4.8A
Power Dissipation-Max :
89W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Drain Current-Max (Abs) (ID) :
5A
Rise Time :
26ns
Published :
2006
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-252
Drain to Source Breakdown Voltage :
500V
Terminal Form :
Gull wing
Pulsed Drain Current-Max (IDM) :
10A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Status :
Obsolete
FET Type :
N-Channel
DS Breakdown Voltage-Min :
500 V
Factory Lead Time :
8 Weeks
Power Dissipation-Max (Abs) :
89 W
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
65 ns
JESD-30 Code :
R-PSSO-G2
Power Dissipation (Max) :
89W (Tc)
Pin Count :
4
Number of Elements :
1
Qualification Status :
Not Qualified
Drain-source On Resistance-Max :
1.4 Ω
Element Configuration :
Single
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2.4A, 10V
Fall Time (Typ) :
24 ns
Reach Compliance Code :
Compliant
Terminal Position :
Single
Vgs (Max) :
±30V
Manufacturer :
IXYS Corporation
Gate Charge (Qg) (Max) @ Vgs :
12.6nC @ 10V
Terminal Finish :
Pure Tin (Sn)
Transistor Element Material :
SILICON
Number of Terminals :
2
Avalanche Energy Rating (Eas) :
250 mJ
Series :
PolarHV™
Power Dissipation :
89W
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
500V
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
2
Pbfree Code :
yes
Surface Mount :
yes
JEDEC-95 Code :
TO-252
FET Feature :
--
Transistor Application :
SWITCHING
Datasheets
IXTY5N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY5N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, IXTY5N50P pinout, IXTY5N50P datasheet PDF, IXTY5N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY5N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY5N50P


N-Channel Tube 1.4 Ω @ 2.4A, 10V ±30V 620pF @ 25V 12.6nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY5N50P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 620pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 10A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTY5N50P Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 10A.
a 500V drain to source voltage (Vdss)


IXTY5N50P Applications


There are a lot of IXYS
IXTY5N50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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