IXTY5N50P
- Mfr.Part #
- IXTY5N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.8A TO252
- Stock
- 47,180
- In Stock :
- 47,180
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 4.8A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Continuous Drain Current (ID) :
- 4.8A
- Power Dissipation-Max :
- 89W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Drain Current-Max (Abs) (ID) :
- 5A
- Rise Time :
- 26ns
- Published :
- 2006
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- TO-252
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 10A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Obsolete
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 500 V
- Factory Lead Time :
- 8 Weeks
- Power Dissipation-Max (Abs) :
- 89 W
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 65 ns
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation (Max) :
- 89W (Tc)
- Pin Count :
- 4
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 1.4 Ω
- Element Configuration :
- Single
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 2.4A, 10V
- Fall Time (Typ) :
- 24 ns
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Manufacturer :
- IXYS Corporation
- Gate Charge (Qg) (Max) @ Vgs :
- 12.6nC @ 10V
- Terminal Finish :
- Pure Tin (Sn)
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 2
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Series :
- PolarHV™
- Power Dissipation :
- 89W
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Surface Mount :
- yes
- JEDEC-95 Code :
- TO-252
- FET Feature :
- --
- Transistor Application :
- SWITCHING
- Datasheets
- IXTY5N50P

N-Channel Tube 1.4 Ω @ 2.4A, 10V ±30V 620pF @ 25V 12.6nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY5N50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 620pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 10A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTY5N50P Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 10A.
a 500V drain to source voltage (Vdss)
IXTY5N50P Applications
There are a lot of IXYS
IXTY5N50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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