IXTY55N075T

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Mfr.Part #
IXTY55N075T
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 75V 55A TO252
Stock
5,761
In Stock :
5,761

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
44 ns
FET Feature :
--
JESD-30 Code :
R-PSSO-G2
Terminal Finish :
Matte Tin (Sn)
Fall Time (Typ) :
41 ns
Supplier Device Package :
TO-252
Number of Pins :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
2
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
75V
Polarity/Channel Type :
N-Channel
Element Configuration :
Single
Surface Mount :
yes
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Drain to Source Resistance :
19.5 mΩ
JEDEC-95 Code :
TO-252AA
Qualification Status :
Not Qualified
Pin Count :
4
Continuous Drain Current (ID) :
55A
FET Type :
N-Channel
RoHS Status :
RoHS Compliant
DS Breakdown Voltage-Min :
85 V
Published :
2006
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance :
1.4 nF
Manufacturer :
IXYS Corporation
Power Dissipation :
130W
Drain to Source Voltage (Vdss) :
75V
Drain-source On Resistance-Max :
0.023 Ω
Number of Terminals :
2
Mounting Type :
Surface Mount
Product Status :
Obsolete
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
130W Tc
Pulsed Drain Current-Max (IDM) :
130 A
Vgs(th) (Max) @ Id :
4V @ 25μA
Max Operating Temperature :
175 °C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Packaging :
Tube
Operating Temperature :
-55°C~175°C TJ
Terminal Form :
Gull wing
Mount :
Surface Mount
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Rds On Max :
19.5 mΩ
Rise Time :
50ns
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
50A
Series :
TrenchMV™
Vgs (Max) :
±20V
Number of Elements :
1
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Avalanche Energy Rating (Eas) :
250 mJ
Max Power Dissipation :
130 W
Power Dissipation (Max) :
130W (Tc)
Package :
Tube
RoHS :
Compliant
Additional Feature :
AVALANCHE RATED
Rds On (Max) @ Id, Vgs :
19.5m Ω @ 27.5A, 10V
JESD-609 Code :
e3
Min Operating Temperature :
-55 °C
Datasheets
IXTY55N075T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY55N075T from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IXTY55N075T pinout, IXTY55N075T datasheet PDF, IXTY55N075T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY55N075T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY55N075T


N-Channel Tube 19.5m Ω @ 27.5A, 10V ±20V 1400pF @ 25V 33nC @ 10V 75V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY55N075T Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 250 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1400pF @ 25V.This device has a continuous drain current (ID) of [55A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.A device's drain current is its maximum continuous current, and this device's drain current is 50A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 130 A is the maximum peak drain current rated for this device.MOSFETs have 19.5 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 85 V.In order to operate this transistor, a voltage of 75V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTY55N075T Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 130 A.
single MOSFETs transistor is 19.5 mΩ
a 75V drain to source voltage (Vdss)


IXTY55N075T Applications


There are a lot of IXYS
IXTY55N075T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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