IXTY55N075T
- Mfr.Part #
- IXTY55N075T
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 55A TO252
- Stock
- 5,761
- In Stock :
- 5,761
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 44 ns
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Matte Tin (Sn)
- Fall Time (Typ) :
- 41 ns
- Supplier Device Package :
- TO-252
- Number of Pins :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 75V
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- Surface Mount :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Drain to Source Resistance :
- 19.5 mΩ
- JEDEC-95 Code :
- TO-252AA
- Qualification Status :
- Not Qualified
- Pin Count :
- 4
- Continuous Drain Current (ID) :
- 55A
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- DS Breakdown Voltage-Min :
- 85 V
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 1.4 nF
- Manufacturer :
- IXYS Corporation
- Power Dissipation :
- 130W
- Drain to Source Voltage (Vdss) :
- 75V
- Drain-source On Resistance-Max :
- 0.023 Ω
- Number of Terminals :
- 2
- Mounting Type :
- Surface Mount
- Product Status :
- Obsolete
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 130W Tc
- Pulsed Drain Current-Max (IDM) :
- 130 A
- Vgs(th) (Max) @ Id :
- 4V @ 25μA
- Max Operating Temperature :
- 175 °C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Rds On Max :
- 19.5 mΩ
- Rise Time :
- 50ns
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 50A
- Series :
- TrenchMV™
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Max Power Dissipation :
- 130 W
- Power Dissipation (Max) :
- 130W (Tc)
- Package :
- Tube
- RoHS :
- Compliant
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 19.5m Ω @ 27.5A, 10V
- JESD-609 Code :
- e3
- Min Operating Temperature :
- -55 °C
- Datasheets
- IXTY55N075T

N-Channel Tube 19.5m Ω @ 27.5A, 10V ±20V 1400pF @ 25V 33nC @ 10V 75V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY55N075T Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 250 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1400pF @ 25V.This device has a continuous drain current (ID) of [55A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.A device's drain current is its maximum continuous current, and this device's drain current is 50A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 130 A is the maximum peak drain current rated for this device.MOSFETs have 19.5 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 85 V.In order to operate this transistor, a voltage of 75V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTY55N075T Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 130 A.
single MOSFETs transistor is 19.5 mΩ
a 75V drain to source voltage (Vdss)
IXTY55N075T Applications
There are a lot of IXYS
IXTY55N075T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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