IXTY50N085T

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Mfr.Part #
IXTY50N085T
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 85V 50A TO252
Stock
8,074
In Stock :
8,074

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
130 A
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Surface Mount
Package :
Tube
Drain-source On Resistance-Max :
0.023 Ω
JESD-609 Code :
e3
Number of Elements :
1
Vgs (Max) :
±20V
Published :
2006
Packaging :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
Manufacturer :
IXYS Corporation
Terminal Finish :
Matte Tin (Sn)
Pbfree Code :
yes
Terminal Form :
Gull wing
Element Configuration :
Single
Rise Time :
32ns
Power Dissipation-Max :
130W Tc
Power Dissipation :
130W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Surface Mount :
yes
JEDEC-95 Code :
TO-252AA
FET Type :
N-Channel
Series :
TrenchMV™
Supplier Device Package :
TO-252
Continuous Drain Current (ID) :
50A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
RoHS Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
2
Number of Terminations :
2
JESD-30 Code :
R-PSSO-G2
Product Status :
Obsolete
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Vgs(th) (Max) @ Id :
4V @ 25μA
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
250 mJ
Drain to Source Voltage (Vdss) :
85V
Turn-Off Delay Time :
38 ns
Fall Time (Typ) :
33 ns
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Rds On (Max) @ Id, Vgs :
23m Ω @ 25A, 10V
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
1460pF @ 25V
DS Breakdown Voltage-Min :
85 V
Power Dissipation (Max) :
130W (Tc)
Drain to Source Breakdown Voltage :
85V
Pin Count :
4
Datasheets
IXTY50N085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY50N085T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Pins:3, IXTY50N085T pinout, IXTY50N085T datasheet PDF, IXTY50N085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY50N085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY50N085T


N-Channel Tube 23m Ω @ 25A, 10V ±20V 1460pF @ 25V 34nC @ 10V 85V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY50N085T Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 250 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1460pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 85V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 85V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 38 ns.Peak drain current for this device is 130 A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 85 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 85V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTY50N085T Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 130 A.
a 85V drain to source voltage (Vdss)


IXTY50N085T Applications


There are a lot of IXYS
IXTY50N085T applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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