IXTY4N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Qualification Status :

Not Qualified

Series :

PolarHV™

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max :

89W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

150 mJ

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

5.5V @ 100μA

Drain Current-Max (Abs) (ID) :

4A

Transistor Element Material :

SILICON

FET Feature :

--

Published :

2006

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

10A

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2 Ω @ 2A, 10V

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 25V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Product Status :

Obsolete

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Mounting Type :

Surface Mount

Number of Terminations :

2

Number of Terminals :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Pin Count :

4

Mount :

Surface Mount

JEDEC-95 Code :

TO-252

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Supplier Device Package :

TO-252

Continuous Drain Current (ID) :

4A

Power Dissipation (Max) :

89W (Tc)

Pbfree Code :

yes

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

IXYS Corporation

Drain-source On Resistance-Max :

2Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

8 Weeks

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ