IXTY44N10T

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Mfr.Part #
IXTY44N10T
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 44A TO252
Stock
5,513
In Stock :
5,513

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tube
Series :
TrenchMV™
Number of Channels :
1 Channel
Length :
6.22 mm
Product Category :
MOSFET
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Brand :
IXYS
Product Status :
Active
Packaging :
Tube
Published :
2006
Drain to Source Voltage (Vdss) :
100V
JESD-30 Code :
R-PSSO-G2
Radiation Hardening :
No
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Drain to Source Breakdown Voltage :
100V
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
30m Ω @ 22A, 10V
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Tradename :
HiPerFET
Factory Lead Time :
24 Weeks
Fall Time (Typ) :
32 ns
Mounting Type :
Surface Mount
Power Dissipation-Max :
130W Tc
Turn-Off Delay Time :
36 ns
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Additional Feature :
AVALANCHE RATED
Mount :
Surface Mount
Continuous Drain Current (ID) :
44A
Number of Elements :
1
Reach Compliance Code :
Unknown
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Avalanche Energy Rating (Eas) :
250 mJ
Pbfree Code :
yes
RoHS :
Details
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Manufacturer :
IXYS
Configuration :
Single
Number of Terminations :
2
Pin Count :
4
Height :
2.38 mm
Rise Time :
47ns
Base Product Number :
IXTY44
Current - Continuous Drain (Id) @ 25°C :
44A Tc
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
1262pF @ 25V
Element Configuration :
Single
Transistor Application :
SWITCHING
Power Dissipation :
130W
Type :
TrenchMV Power MOSFET
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Supplier Device Package :
TO-252, (D-Pak)
Maximum Operating Temperature :
+ 175 C
Width :
6.73 mm
Power Dissipation (Max) :
130W (Tc)
Mounting Style :
SMD/SMT
Terminal Form :
Gull wing
JEDEC-95 Code :
TO-252AA
Minimum Operating Temperature :
- 55 C
ECCN Code :
EAR99
FET Type :
N-Channel
Number of Pins :
3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY44N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Type:TrenchMV Power MOSFET, Number of Pins:3, IXTY44N10T pinout, IXTY44N10T datasheet PDF, IXTY44N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY44N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY44N10T


N-Channel Tube 30m Ω @ 22A, 10V ±30V 1262pF @ 25V 33nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY44N10T Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1262pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTY44N10T Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 36 ns
a 100V drain to source voltage (Vdss)


IXTY44N10T Applications


There are a lot of IXYS
IXTY44N10T applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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