IXTY3N60P
- Mfr.Part #
- IXTY3N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3A TO252
- Stock
- 16,255
- In Stock :
- 16,255
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Obsolete
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Series :
- PolarHV™
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 2.9Ohm
- Surface Mount :
- yes
- Reach Compliance Code :
- Compliant
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 70W Tc
- Voltage - Rated DC :
- 600V
- DS Breakdown Voltage-Min :
- 600 V
- Published :
- 2006
- Vgs (Max) :
- ±30V
- Number of Terminals :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-252AA
- Drain to Source Voltage (Vdss) :
- 600V
- Rds On (Max) @ Id, Vgs :
- 2.9 Ω @ 500mA, 10V
- Drain to Source Breakdown Voltage :
- 600V
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- RoHS Compliant
- Power Dissipation (Max) :
- 70W (Tc)
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Manufacturer :
- IXYS Corporation
- Packaging :
- Tube
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 3A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 8 Weeks
- FET Feature :
- --
- Terminal Finish :
- Matte Tin (Sn)
- Fall Time (Typ) :
- 22 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 9.8nC @ 10V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Current Rating :
- 3A
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 2.9 Ω
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 3A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Supplier Device Package :
- TO-252, (D-Pak)
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Rise Time :
- 25ns
- Power Dissipation :
- 70W
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 58 ns
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 411pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 6A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXTY3N60P

N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY3N60P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 411pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 58 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 6A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTY3N60P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a 600V drain to source voltage (Vdss)
IXTY3N60P Applications
There are a lot of IXYS
IXTY3N60P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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