IXTY3N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

6A

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Series :

PolarHV™

FET Feature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

25ns

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

411pF @ 25V

RoHS Status :

RoHS Compliant

Surface Mount :

yes

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-Channel

Fall Time (Typ) :

22 ns

Gate Charge (Qg) (Max) @ Vgs :

9.8nC @ 10V

Power Dissipation (Max) :

70W (Tc)

Package :

Tube

Pin Count :

4

Manufacturer :

IXYS Corporation

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

2.9Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Number of Terminations :

2

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.9 Ω @ 500mA, 10V

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

3A

Drain to Source Breakdown Voltage :

600V

Avalanche Energy Rating (Eas) :

100 mJ

Pbfree Code :

yes

Product Status :

Obsolete

Voltage - Rated DC :

600V

Package Shape :

RECTANGULAR

Number of Elements :

1

Supplier Device Package :

TO-252, (D-Pak)

Published :

2006

Gate to Source Voltage (Vgs) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600 V

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Reach Compliance Code :

Compliant

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Vgs (Max) :

±30V

Turn-Off Delay Time :

58 ns

Element Configuration :

Single

Power Dissipation :

70W

Current Rating :

3A

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

2.9 Ω

Power Dissipation-Max :

70W Tc

Vgs(th) (Max) @ Id :

5.5V @ 50μA

Number of Terminals :

2

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

600V

Mount :

Surface Mount

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA