IXTY3N60P

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Mfr.Part #
IXTY3N60P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 3A TO252
Stock
16,255
In Stock :
16,255

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Obsolete
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Series :
PolarHV™
Operating Mode :
ENHANCEMENT MODE
Resistance :
2.9Ohm
Surface Mount :
yes
Reach Compliance Code :
Compliant
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Mount :
Surface Mount
Pbfree Code :
yes
Number of Terminations :
2
Power Dissipation-Max :
70W Tc
Voltage - Rated DC :
600V
DS Breakdown Voltage-Min :
600 V
Published :
2006
Vgs (Max) :
±30V
Number of Terminals :
2
Configuration :
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code :
TO-252AA
Drain to Source Voltage (Vdss) :
600V
Rds On (Max) @ Id, Vgs :
2.9 Ω @ 500mA, 10V
Drain to Source Breakdown Voltage :
600V
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
RoHS Compliant
Power Dissipation (Max) :
70W (Tc)
Terminal Form :
Gull wing
JESD-30 Code :
R-PSSO-G2
Manufacturer :
IXYS Corporation
Packaging :
Tube
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
3A
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
8 Weeks
FET Feature :
--
Terminal Finish :
Matte Tin (Sn)
Fall Time (Typ) :
22 ns
Gate Charge (Qg) (Max) @ Vgs :
9.8nC @ 10V
Transistor Element Material :
SILICON
Terminal Position :
Single
Current Rating :
3A
FET Type :
N-Channel
Drain-source On Resistance-Max :
2.9 Ω
Pin Count :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
3A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Supplier Device Package :
TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Rise Time :
25ns
Power Dissipation :
70W
Number of Elements :
1
Avalanche Energy Rating (Eas) :
100 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
58 ns
Package Shape :
RECTANGULAR
Input Capacitance (Ciss) (Max) @ Vds :
411pF @ 25V
Pulsed Drain Current-Max (IDM) :
6A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Datasheets
IXTY3N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY3N60P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, IXTY3N60P pinout, IXTY3N60P datasheet PDF, IXTY3N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY3N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY3N60P


N-Channel Tube 2.9 Ω @ 500mA, 10V ±30V 411pF @ 25V 9.8nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY3N60P Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 411pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 3A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 58 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 6A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600 V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTY3N60P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 6A.
a 600V drain to source voltage (Vdss)


IXTY3N60P Applications


There are a lot of IXYS
IXTY3N60P applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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