IXTY3N50P

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Mfr.Part #
IXTY3N50P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 3.6A TO252AA
Stock
44,028
In Stock :
44,028

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
3.6A Tc
Turn-Off Delay Time :
38 ns
Pin Count :
4
JEDEC-95 Code :
TO-252AA
Supplier Device Package :
TO-252AA
JESD-30 Code :
R-PSSO-G2
Additional Feature :
AVALANCHE RATED
Vgs (Max) :
±30V
Drain to Source Breakdown Voltage :
500V
Transistor Element Material :
SILICON
Power Dissipation-Max :
70W Tc
Package :
Tube
Configuration :
SINGLE WITH BUILT-IN DIODE
Manufacturer :
IXYS Corporation
Package Shape :
RECTANGULAR
Number of Pins :
3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
2 Ω @ 1.8A, 10V
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
9.3nC @ 10V
Continuous Drain Current (ID) :
3.6A
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
30V
JESD-609 Code :
e3
Product Status :
Obsolete
Transistor Application :
SWITCHING
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
500V
Surface Mount :
yes
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
409pF @ 25V
Mounting Type :
Surface Mount
Lead Free :
Lead Free
Packaging :
Tube
Number of Elements :
1
Number of Terminals :
2
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Factory Lead Time :
8 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
500 V
Power Dissipation :
70W
Number of Terminations :
2
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Feature :
--
Pbfree Code :
yes
Current Rating :
3A
Terminal Position :
Single
Series :
PolarHV™
Fall Time (Typ) :
12 ns
Case Connection :
DRAIN
Drain-source On Resistance-Max :
2Ohm
Mount :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation (Max) :
70W (Tc)
Pulsed Drain Current-Max (IDM) :
8A
Voltage - Rated DC :
500V
FET Type :
N-Channel
Rise Time :
15ns
Polarity/Channel Type :
N-Channel
Published :
2006
Avalanche Energy Rating (Eas) :
180 mJ
Terminal Finish :
Matte Tin (Sn)
Datasheets
IXTY3N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY3N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, IXTY3N50P pinout, IXTY3N50P datasheet PDF, IXTY3N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY3N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY3N50P


N-Channel Tube 2 Ω @ 1.8A, 10V ±30V 409pF @ 25V 9.3nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY3N50P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 180 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 409pF @ 25V.This device conducts a continuous drain current (ID) of 3.6A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 8A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTY3N50P Features


the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 8A.
a 500V drain to source voltage (Vdss)


IXTY3N50P Applications


There are a lot of IXYS
IXTY3N50P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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