IXTY3N50P
- Mfr.Part #
- IXTY3N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3.6A TO252AA
- Stock
- 44,028
- In Stock :
- 44,028
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Turn-Off Delay Time :
- 38 ns
- Pin Count :
- 4
- JEDEC-95 Code :
- TO-252AA
- Supplier Device Package :
- TO-252AA
- JESD-30 Code :
- R-PSSO-G2
- Additional Feature :
- AVALANCHE RATED
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 70W Tc
- Package :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS Corporation
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1.8A, 10V
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 9.3nC @ 10V
- Continuous Drain Current (ID) :
- 3.6A
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- Product Status :
- Obsolete
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 500V
- Surface Mount :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 409pF @ 25V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Number of Elements :
- 1
- Number of Terminals :
- 2
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 500 V
- Power Dissipation :
- 70W
- Number of Terminations :
- 2
- Reach Compliance Code :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- --
- Pbfree Code :
- yes
- Current Rating :
- 3A
- Terminal Position :
- Single
- Series :
- PolarHV™
- Fall Time (Typ) :
- 12 ns
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 2Ohm
- Mount :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 70W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 8A
- Voltage - Rated DC :
- 500V
- FET Type :
- N-Channel
- Rise Time :
- 15ns
- Polarity/Channel Type :
- N-Channel
- Published :
- 2006
- Avalanche Energy Rating (Eas) :
- 180 mJ
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- IXTY3N50P

N-Channel Tube 2 Ω @ 1.8A, 10V ±30V 409pF @ 25V 9.3nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY3N50P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 180 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 409pF @ 25V.This device conducts a continuous drain current (ID) of 3.6A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 8A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTY3N50P Features
the avalanche energy rating (Eas) is 180 mJ
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 8A.
a 500V drain to source voltage (Vdss)
IXTY3N50P Applications
There are a lot of IXYS
IXTY3N50P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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