IXTY32P05T
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- Mfr.Part #
- IXTY32P05T
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 32A TO252
- Stock
- 16,169
- In Stock ：
- 16,169
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 50V
- Reach Compliance Code :
- Unknown
- Drain-source On Resistance-Max :
- 0.039Ohm
- Supplier Device Package :
- TO-252
- Series :
- TrenchP™
- Product Status :
- Active
- Power Dissipation (Max) :
- 83W (Tc)
- FET Type :
- P-Channel
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 1975pF @ 25V
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Product Category :
- MOSFET
- RoHS :
- Details
- Power Dissipation-Max (Abs) :
- 83 W
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Polarity :
- P-Channel
- Polarity/Channel Type :
- P-Channel
- Pin Count :
- 4
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 83W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Vgs (Max) :
- ±15V
- FET Feature :
- --
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 32A
- Number of Terminals :
- 2
- Brand :
- IXYS
- Additional Feature :
- AVALANCHE RATED
- Base Product Number :
- IXTY32
- Pulsed Drain Current-Max (IDM) :
- 110A
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 16A, 10V
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 50V
- JEDEC-95 Code :
- TO-252
- Package :
- Tube
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 32 A
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- Factory Lead Time :
- 24 Weeks
- Number of Elements :
- 1
- Mounting Style :
- SMD/SMT
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Product Type :
- MOSFET
- Datasheets
- IXTY32P05T
P-Channel Tube 39m Ω @ 16A, 10V ±15V 1975pF @ 25V 46nC @ 10V 50V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY32P05T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 200 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1975pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 32 A.Pulsed drain current is maximum rated peak drain current 110A.A normal operation of the DS requires keeping the breakdown voltage above 50V.This transistor requires a drain-source voltage (Vdss) of 50V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTY32P05T Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 110A.
a 50V drain to source voltage (Vdss)
IXTY32P05T Applications
There are a lot of IXYS
IXTY32P05T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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