IXTY32P05T
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- Mfr.Part #
- IXTY32P05T
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 32A TO252
- Stock
- 16,169
- In Stock ：
- 16,169
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- JEDEC-95 Code :
- TO-252
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 16A, 10V
- Power Dissipation (Max) :
- 83W (Tc)
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- FET Type :
- P-Channel
- Series :
- TrenchP™
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 24 Weeks
- Continuous Drain Current (ID) :
- 32A
- Number of Terminals :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Polarity :
- P-Channel
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.039Ohm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mount :
- Surface Mount
- FET Feature :
- --
- Brand :
- IXYS
- Terminal Position :
- Single
- Power Dissipation-Max :
- 83W Tc
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Polarity/Channel Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- JESD-30 Code :
- R-PSSO-G2
- Mounting Style :
- SMD/SMT
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max (Abs) :
- 83 W
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Product Category :
- MOSFET
- Published :
- 2012
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXTY32
- DS Breakdown Voltage-Min :
- 50V
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Pulsed Drain Current-Max (IDM) :
- 110A
- Drain to Source Voltage (Vdss) :
- 50V
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-252
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 32 A
- Vgs (Max) :
- ±15V
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1975pF @ 25V
- Datasheets
- IXTY32P05T
IXTY32P05T Documents
P-Channel Tube 39m Ω @ 16A, 10V ±15V 1975pF @ 25V 46nC @ 10V 50V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY32P05T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 200 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1975pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 32 A.Pulsed drain current is maximum rated peak drain current 110A.A normal operation of the DS requires keeping the breakdown voltage above 50V.This transistor requires a drain-source voltage (Vdss) of 50V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTY32P05T Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 110A.
a 50V drain to source voltage (Vdss)
IXTY32P05T Applications
There are a lot of IXYS
IXTY32P05T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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