IXTY2R4N50P

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Mfr.Part #
IXTY2R4N50P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 2.4A TO252
Stock
6,294
In Stock :
6,294

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
RoHS Status :
RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
55W
Mount :
Surface Mount
Number of Terminals :
2
Rds On (Max) @ Id, Vgs :
3.75 Ω @ 500mA, 10V
Pin Count :
4
Drain-source On Resistance-Max :
3.75 Ω
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
JEDEC-95 Code :
TO-252AA
Transistor Element Material :
SILICON
Element Configuration :
Single
Drain to Source Breakdown Voltage :
500V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Current Rating :
2A
Power Dissipation (Max) :
55W (Tc)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
4.5A
Fall Time (Typ) :
28 ns
Current - Continuous Drain (Id) @ 25°C :
2.4A Tc
Continuous Drain Current (ID) :
2.4A
Product Status :
Obsolete
Supplier Device Package :
TO-252, (D-Pak)
Number of Pins :
3
JESD-30 Code :
R-PSSO-G2
Transistor Application :
SWITCHING
Turn-Off Delay Time :
65 ns
Vgs (Max) :
±30V
FET Feature :
--
Published :
2006
Additional Feature :
AVALANCHE RATED
Surface Mount :
yes
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Packaging :
Tube
Voltage - Rated DC :
500V
Package Shape :
RECTANGULAR
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate Charge (Qg) (Max) @ Vgs :
6.1nC @ 10V
Manufacturer :
IXYS Corporation
DS Breakdown Voltage-Min :
500 V
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
30V
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
500V
Number of Terminations :
2
Avalanche Energy Rating (Eas) :
100 mJ
Power Dissipation-Max :
55W Tc
Factory Lead Time :
8 Weeks
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Series :
PolarHV™
Rise Time :
29ns
Vgs(th) (Max) @ Id :
5.5V @ 25μA
Datasheets
IXTY2R4N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY2R4N50P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, IXTY2R4N50P pinout, IXTY2R4N50P datasheet PDF, IXTY2R4N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY2R4N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY2R4N50P


N-Channel Tube 3.75 Ω @ 500mA, 10V ±30V 240pF @ 25V 6.1nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY2R4N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 240pF @ 25V.This device has a continuous drain current (ID) of [2.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 4.5A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTY2R4N50P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 4.5A.
a 500V drain to source voltage (Vdss)


IXTY2R4N50P Applications


There are a lot of IXYS
IXTY2R4N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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