IXTY2R4N50P
- Mfr.Part #
- IXTY2R4N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.4A TO252
- Stock
- 6,294
- In Stock :
- 6,294
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 55W
- Mount :
- Surface Mount
- Number of Terminals :
- 2
- Rds On (Max) @ Id, Vgs :
- 3.75 Ω @ 500mA, 10V
- Pin Count :
- 4
- Drain-source On Resistance-Max :
- 3.75 Ω
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-252AA
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 500V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current Rating :
- 2A
- Power Dissipation (Max) :
- 55W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 4.5A
- Fall Time (Typ) :
- 28 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Tc
- Continuous Drain Current (ID) :
- 2.4A
- Product Status :
- Obsolete
- Supplier Device Package :
- TO-252, (D-Pak)
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 65 ns
- Vgs (Max) :
- ±30V
- FET Feature :
- --
- Published :
- 2006
- Additional Feature :
- AVALANCHE RATED
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Packaging :
- Tube
- Voltage - Rated DC :
- 500V
- Package Shape :
- RECTANGULAR
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 6.1nC @ 10V
- Manufacturer :
- IXYS Corporation
- DS Breakdown Voltage-Min :
- 500 V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Terminations :
- 2
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Power Dissipation-Max :
- 55W Tc
- Factory Lead Time :
- 8 Weeks
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- Series :
- PolarHV™
- Rise Time :
- 29ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 25μA
- Datasheets
- IXTY2R4N50P

N-Channel Tube 3.75 Ω @ 500mA, 10V ±30V 240pF @ 25V 6.1nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY2R4N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 240pF @ 25V.This device has a continuous drain current (ID) of [2.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65 ns.A maximum pulsed drain current of 4.5A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTY2R4N50P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 4.5A.
a 500V drain to source voltage (Vdss)
IXTY2R4N50P Applications
There are a lot of IXYS
IXTY2R4N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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