IXTY2N80P
- Mfr.Part #
- IXTY2N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO252
- Stock
- 39,272
- In Stock :
- 39,272
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Rds On Max :
- 6 Ω
- Input Capacitance :
- 440 pF
- Supplier Device Package :
- TO-252, (D-Pak)
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 2A
- Drain to Source Breakdown Voltage :
- 800V
- Max Operating Temperature :
- 150 °C
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 70W Tc
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-252AA
- Surface Mount :
- yes
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 1A, 10V
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Min Operating Temperature :
- -55 °C
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Rise Time :
- 35ns
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- DS Breakdown Voltage-Min :
- 800 V
- Power Dissipation (Max) :
- 70W (Tc)
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Fall Time (Typ) :
- 28 ns
- Published :
- 2006
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Max Power Dissipation :
- 70 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 70W
- Number of Terminals :
- 2
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- RoHS :
- Compliant
- Drain to Source Resistance :
- 6 Ω
- Pin Count :
- 4
- Drain-source On Resistance-Max :
- 6Ohm
- Manufacturer :
- IXYS Corporation
- Drain to Source Voltage (Vdss) :
- 800V
- RoHS Status :
- RoHS Compliant
- Series :
- PolarHV™
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 53 ns
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 4A
- Drain Current-Max (Abs) (ID) :
- 2A
- Gate Charge (Qg) (Max) @ Vgs :
- 10.6nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXTY2N80P

N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY2N80P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 100 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 440pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.Peak drain current is 4A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 6 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTY2N80P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
single MOSFETs transistor is 6 Ω
a 800V drain to source voltage (Vdss)
IXTY2N80P Applications
There are a lot of IXYS
IXTY2N80P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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