IXTY2N80P

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Mfr.Part #
IXTY2N80P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 800V 2A TO252
Stock
39,272
In Stock :
39,272

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Rds On Max :
6 Ω
Input Capacitance :
440 pF
Supplier Device Package :
TO-252, (D-Pak)
JESD-30 Code :
R-PSSO-G2
Transistor Application :
SWITCHING
Package :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Continuous Drain Current (ID) :
2A
Drain to Source Breakdown Voltage :
800V
Max Operating Temperature :
150 °C
Transistor Element Material :
SILICON
Power Dissipation-Max :
70W Tc
FET Type :
N-Channel
Mounting Type :
Surface Mount
Mount :
Surface Mount
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-252AA
Surface Mount :
yes
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
6 Ω @ 1A, 10V
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
100 mJ
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Min Operating Temperature :
-55 °C
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Rise Time :
35ns
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±30V
DS Breakdown Voltage-Min :
800 V
Power Dissipation (Max) :
70W (Tc)
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Fall Time (Typ) :
28 ns
Published :
2006
Element Configuration :
Single
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Pbfree Code :
yes
Max Power Dissipation :
70 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
70W
Number of Terminals :
2
FET Feature :
--
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Gate to Source Voltage (Vgs) :
30V
Factory Lead Time :
8 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
RoHS :
Compliant
Drain to Source Resistance :
6 Ω
Pin Count :
4
Drain-source On Resistance-Max :
6Ohm
Manufacturer :
IXYS Corporation
Drain to Source Voltage (Vdss) :
800V
RoHS Status :
RoHS Compliant
Series :
PolarHV™
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Turn-Off Delay Time :
53 ns
Terminal Form :
Gull wing
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
4A
Drain Current-Max (Abs) (ID) :
2A
Gate Charge (Qg) (Max) @ Vgs :
10.6nC @ 10V
Polarity/Channel Type :
N-Channel
Datasheets
IXTY2N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N80P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, IXTY2N80P pinout, IXTY2N80P datasheet PDF, IXTY2N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY2N80P


N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY2N80P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 100 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 440pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.Peak drain current is 4A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 6 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTY2N80P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
single MOSFETs transistor is 6 Ω
a 800V drain to source voltage (Vdss)


IXTY2N80P Applications


There are a lot of IXYS
IXTY2N80P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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