IXTY2N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Series :

PolarHV™

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

100 mJ

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

800V

Lead Free :

Lead Free

Power Dissipation :

70W

Continuous Drain Current (ID) :

2A

Power Dissipation-Max :

70W Tc

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Manufacturer :

IXYS Corporation

Drain-source On Resistance-Max :

6Ohm

FET Type :

N-Channel

Terminal Form :

Gull wing

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

2A

Min Operating Temperature :

-55 °C

Input Capacitance :

440 pF

Package :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

800V

Rds On (Max) @ Id, Vgs :

6 Ω @ 1A, 10V

Vgs(th) (Max) @ Id :

5.5V @ 50μA

Pulsed Drain Current-Max (IDM) :

4A

Turn-Off Delay Time :

53 ns

Number of Elements :

1

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

10.6nC @ 10V

Number of Terminations :

2

Element Configuration :

Single

RoHS :

Compliant

Pin Count :

4

Power Dissipation (Max) :

70W (Tc)

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

800 V

Supplier Device Package :

TO-252, (D-Pak)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On Max :

6 Ω

Gate to Source Voltage (Vgs) :

30V

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

2

Transistor Application :

SWITCHING

Max Operating Temperature :

150 °C

Published :

2006

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Terminal Finish :

Matte Tin (Sn)

Product Status :

Obsolete

JESD-30 Code :

R-PSSO-G2

Drain to Source Resistance :

6 Ω

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

35ns

Max Power Dissipation :

70 W

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-252AA

Reach Compliance Code :

Compliant

Mount :

Surface Mount

Vgs (Max) :

±30V

Fall Time (Typ) :

28 ns

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3