IXTY2N60P

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Mfr.Part #
IXTY2N60P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 2A TO252
Stock
29,004
In Stock :
29,004

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
RoHS Compliant
Mount :
Surface Mount
Power Dissipation (Max) :
55W (Tc)
Manufacturer :
IXYS
Package Shape :
RECTANGULAR
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
2A
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
55W
Terminal Position :
Single
Drain to Source Breakdown Voltage :
600V
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
Gull wing
Pulsed Drain Current-Max (IDM) :
4A
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
2A
Pin Count :
4
Rds On (Max) @ Id, Vgs :
5.1 Ω @ 1A, 10V
Power Dissipation-Max :
55W Tc
Drain to Source Voltage (Vdss) :
600V
Configuration :
Single
Transistor Polarity :
N-Channel
Width :
6.73 mm
Vgs (Max) :
±30V
Channel Mode :
Enhancement
Length :
6.22 mm
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Fall Time (Typ) :
23 ns
Transistor Application :
SWITCHING
Package :
Tube
Number of Terminals :
2
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
5V @ 250μA
RoHS :
Details
Tradename :
PolarHV
Additional Feature :
AVALANCHE RATED
Lead Free :
Lead Free
Factory Lead Time :
8 Weeks
Reach Compliance Code :
Compliant
Type :
PolarHV Power MOSFET
Drain-source On Resistance-Max :
5.1 Ω
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
150 mJ
Number of Pins :
3
Maximum Operating Temperature :
+ 150 C
Rise Time :
20ns
Voltage - Rated DC :
600V
Surface Mount :
yes
Number of Terminations :
2
JEDEC-95 Code :
TO-252AA
Gate to Source Voltage (Vgs) :
30V
Mounting Style :
SMD/SMT
Brand :
IXYS
JESD-30 Code :
R-PSSO-G2
Turn-Off Delay Time :
60 ns
DS Breakdown Voltage-Min :
600 V
Published :
2006
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max (Abs) :
55 W
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Product Category :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
TO-252, (D-Pak)
Product Type :
MOSFET
FET Feature :
--
Height :
2.38 mm
Current Rating :
2A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Type :
1 N-Channel
Number of Channels :
1 Channel
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Series :
Polar™
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Product Status :
Obsolete
Datasheets
IXTY2N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Type:PolarHV Power MOSFET, Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXTY2N60P pinout, IXTY2N60P datasheet PDF, IXTY2N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY2N60P


N-Channel Tube 5.1 Ω @ 1A, 10V ±30V 240pF @ 25V 7nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY2N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 240pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 4A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTY2N60P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 4A.
a 600V drain to source voltage (Vdss)


IXTY2N60P Applications


There are a lot of IXYS
IXTY2N60P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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