IXTY2N60P

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Mfr.Part #
IXTY2N60P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 2A TO252
Stock
29,004
In Stock :
29,004

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Voltage - Rated DC :
600V
Power Dissipation-Max (Abs) :
55 W
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
5.1 Ω @ 1A, 10V
Configuration :
Single
Lead Free :
Lead Free
Product Category :
MOSFET
JEDEC-95 Code :
TO-252AA
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Product Type :
MOSFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Power Dissipation :
55W
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-source On Resistance-Max :
5.1 Ω
Height :
2.38 mm
Operating Temperature :
-55°C~150°C TJ
Current Rating :
2A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn-Off Delay Time :
60 ns
Published :
2006
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
TO-252, (D-Pak)
Fall Time (Typ) :
23 ns
Transistor Polarity :
N-Channel
Additional Feature :
AVALANCHE RATED
RoHS :
Details
Element Configuration :
Single
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
Width :
6.73 mm
Operating Mode :
ENHANCEMENT MODE
Channel Mode :
Enhancement
Terminal Form :
Gull wing
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
600V
Mounting Style :
SMD/SMT
Terminal Position :
Single
Minimum Operating Temperature :
- 55 C
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 250μA
Gate to Source Voltage (Vgs) :
30V
Pbfree Code :
yes
DS Breakdown Voltage-Min :
600 V
Factory Lead Time :
8 Weeks
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
150 mJ
RoHS Status :
RoHS Compliant
Rise Time :
20ns
Pulsed Drain Current-Max (IDM) :
4A
Type :
PolarHV Power MOSFET
Mount :
Surface Mount
Number of Terminals :
2
Transistor Application :
SWITCHING
Power Dissipation (Max) :
55W (Tc)
Length :
6.22 mm
Package :
Tube
Continuous Drain Current (ID) :
2A
Brand :
IXYS
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Product Status :
Obsolete
Drain Current-Max (Abs) (ID) :
2A
Polarity/Channel Type :
N-Channel
Number of Channels :
1 Channel
Surface Mount :
yes
Pin Count :
4
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
JESD-30 Code :
R-PSSO-G2
Series :
Polar™
Mounting Type :
Surface Mount
FET Feature :
--
Drain to Source Voltage (Vdss) :
600V
Transistor Type :
1 N-Channel
Power Dissipation-Max :
55W Tc
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Tradename :
PolarHV
Number of Terminations :
2
Datasheets
IXTY2N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N60P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Type:PolarHV Power MOSFET, Number of Channels:1 Channel, Mounting Type:Surface Mount, Number of Terminations:2, IXTY2N60P pinout, IXTY2N60P datasheet PDF, IXTY2N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY2N60P


N-Channel Tube 5.1 Ω @ 1A, 10V ±30V 240pF @ 25V 7nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY2N60P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 240pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 4A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTY2N60P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 4A.
a 600V drain to source voltage (Vdss)


IXTY2N60P Applications


There are a lot of IXYS
IXTY2N60P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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