IXTY2N100P
- Mfr.Part #
- IXTY2N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 2A TO252
- Stock
- 13,357
- In Stock :
- 13,357
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Rise Time :
- 29ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Length :
- 6.73 mm
- Channel Mode :
- Enhancement
- Power Dissipation :
- 86W
- Package :
- Tube
- Product Type :
- MOSFET
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 1000 V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance :
- 655 pF
- Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 5A
- Packaging :
- Tube
- Product Status :
- Active
- Polarity/Channel Type :
- N-Channel
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Transistor Polarity :
- N-Channel
- Min Operating Temperature :
- -55 °C
- JESD-30 Code :
- R-PSSO-G2
- RoHS :
- Details
- Height :
- 2.38 mm
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXTY2
- Number of Elements :
- 1
- FET Feature :
- -
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 86W Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 1000V
- Brand :
- IXYS
- Width :
- 6.22 mm
- Drain to Source Resistance :
- 7.5 Ω
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 24.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Rds On (Max) @ Id, Vgs :
- 7.5 Ω @ 500mA, 10V
- Power Dissipation-Max (Abs) :
- 86 W
- Minimum Operating Temperature :
- - 55 C
- Additional Feature :
- AVALANCHE RATED
- Transistor Application :
- SWITCHING
- Mounting Style :
- SMD/SMT
- Pin Count :
- 4
- Series :
- Polar™
- Max Operating Temperature :
- 150 °C
- Max Power Dissipation :
- 86 W
- Drain-source On Resistance-Max :
- 7.5 Ω
- Number of Terminals :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Compliant
- Fall Time (Typ) :
- 27 ns
- Maximum Operating Temperature :
- + 150 C
- Mount :
- Surface Mount
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 86W (Tc)
- Number of Terminations :
- 2
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- TO-252, (D-Pak)
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Element Configuration :
- Single
- Rds On Max :
- 7.5 Ω
- Published :
- 2008
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 1kV
- Drain Current-Max (Abs) (ID) :
- 2A
- Product Category :
- MOSFET
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- TO-252AA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn-Off Delay Time :
- 80 ns
- Continuous Drain Current (ID) :
- 2A
- Datasheets
- IXTY2N100P
IXTY2N100P Documents

N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY2N100P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 655pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 5A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 7.5 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTY2N100P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
single MOSFETs transistor is 7.5 Ω
a 1000V drain to source voltage (Vdss)
IXTY2N100P Applications
There are a lot of IXYS
IXTY2N100P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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