IXTY2N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

5A

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Published :

2008

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Package :

Tube

Number of Terminals :

2

Turn-Off Delay Time :

80 ns

Rise Time :

29ns

Maximum Operating Temperature :

+ 150 C

Qualification Status :

Not Qualified

Mounting Style :

SMD/SMT

JESD-609 Code :

e3

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Manufacturer :

IXYS

Pbfree Code :

yes

Width :

6.22 mm

Package Shape :

RECTANGULAR

RoHS :

Details

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Series :

Polar™

Number of Terminations :

2

Product Type :

MOSFET

Input Capacitance :

655 pF

Mounting Type :

Surface Mount

Power Dissipation-Max :

86W Tc

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

86 W

Avalanche Energy Rating (Eas) :

150 mJ

DS Breakdown Voltage-Min :

1000 V

Minimum Operating Temperature :

- 55 C

Drain to Source Breakdown Voltage :

1kV

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 25V

Max Operating Temperature :

150 °C

Product Status :

Active

Rds On Max :

7.5 Ω

Power Dissipation-Max (Abs) :

86 W

Packaging :

Tube

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

86W (Tc)

Surface Mount :

yes

Transistor Polarity :

N-Channel

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Height :

2.38 mm

FET Type :

N-Channel

Terminal Position :

Single

Case Connection :

DRAIN

Supplier Device Package :

TO-252, (D-Pak)

Power Dissipation :

86W

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

7.5 Ω

Drain to Source Resistance :

7.5 Ω

Base Product Number :

IXTY2

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 500mA, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

Drain to Source Voltage (Vdss) :

1000V

Continuous Drain Current (ID) :

2A

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

24.3nC @ 10V

FET Feature :

-

Fall Time (Typ) :

27 ns

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Min Operating Temperature :

-55 °C

Drain Current-Max (Abs) (ID) :

2A

Brand :

IXYS

Transistor Type :

1 N-Channel

Number of Elements :

1

Configuration :

Single

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Length :

6.73 mm