IXTY2N100P

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Mfr.Part #
IXTY2N100P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 2A TO252
Stock
13,357
In Stock :
13,357

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Terminal Finish :
Matte Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Rise Time :
29ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
6.73 mm
Channel Mode :
Enhancement
Power Dissipation :
86W
Package :
Tube
Product Type :
MOSFET
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
1000 V
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Input Capacitance :
655 pF
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
5A
Packaging :
Tube
Product Status :
Active
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Transistor Polarity :
N-Channel
Min Operating Temperature :
-55 °C
JESD-30 Code :
R-PSSO-G2
RoHS :
Details
Height :
2.38 mm
Transistor Element Material :
SILICON
Surface Mount :
yes
Number of Channels :
1 Channel
Base Product Number :
IXTY2
Number of Elements :
1
FET Feature :
-
Pbfree Code :
yes
Terminal Position :
Single
Qualification Status :
Not Qualified
Power Dissipation-Max :
86W Tc
Vgs(th) (Max) @ Id :
4.5V @ 100μA
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
1000V
Brand :
IXYS
Width :
6.22 mm
Drain to Source Resistance :
7.5 Ω
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
24.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
655pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Rds On (Max) @ Id, Vgs :
7.5 Ω @ 500mA, 10V
Power Dissipation-Max (Abs) :
86 W
Minimum Operating Temperature :
- 55 C
Additional Feature :
AVALANCHE RATED
Transistor Application :
SWITCHING
Mounting Style :
SMD/SMT
Pin Count :
4
Series :
Polar™
Max Operating Temperature :
150 °C
Max Power Dissipation :
86 W
Drain-source On Resistance-Max :
7.5 Ω
Number of Terminals :
2
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Compliant
Fall Time (Typ) :
27 ns
Maximum Operating Temperature :
+ 150 C
Mount :
Surface Mount
Manufacturer :
IXYS
Power Dissipation (Max) :
86W (Tc)
Number of Terminations :
2
Transistor Type :
1 N-Channel
Supplier Device Package :
TO-252, (D-Pak)
Avalanche Energy Rating (Eas) :
150 mJ
Element Configuration :
Single
Rds On Max :
7.5 Ω
Published :
2008
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
1kV
Drain Current-Max (Abs) (ID) :
2A
Product Category :
MOSFET
Mounting Type :
Surface Mount
JEDEC-95 Code :
TO-252AA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Turn-Off Delay Time :
80 ns
Continuous Drain Current (ID) :
2A
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IXTY2N100P pinout, IXTY2N100P datasheet PDF, IXTY2N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY2N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY2N100P


N-Channel Tube 7.5 Ω @ 500mA, 10V ±20V 655pF @ 25V 24.3nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY2N100P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 655pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 5A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 7.5 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTY2N100P Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
single MOSFETs transistor is 7.5 Ω
a 1000V drain to source voltage (Vdss)


IXTY2N100P Applications


There are a lot of IXYS
IXTY2N100P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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