IXTY26P10T
- Mfr.Part #
- IXTY26P10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 26A TO252
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- RoHS :
- Details
- Input Capacitance (Ciss) (Max) @ Vds :
- 3820pF @ 25V
- Transistor Polarity :
- P-Channel
- Published :
- 2012
- Length :
- 6.22 mm
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 13A, 10V
- Series :
- TrenchP™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- Mounting Type :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Supplier Device Package :
- TO-252
- Pin Count :
- 4
- Brand :
- IXYS
- Terminal Position :
- Single
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 80A
- Drain-source On Resistance-Max :
- 0.09Ohm
- Type :
- TrenchP Power MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- P-Channel
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Tradename :
- TrenchP
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Product Category :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 26A
- Number of Terminations :
- 2
- Vgs (Max) :
- ±15V
- Factory Lead Time :
- 24 Weeks
- Lead Free :
- Lead Free
- Mounting Style :
- SMD/SMT
- Minimum Operating Temperature :
- - 55 C
- Height :
- 2.38 mm
- Packaging :
- Tube
- Number of Channels :
- 1 Channel
- FET Feature :
- --
- Case Connection :
- DRAIN
- Rise Time :
- 15 ns
- Power Dissipation (Max) :
- 150W (Tc)
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Width :
- 6.73 mm
- Power Dissipation-Max :
- 150W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Reach Compliance Code :
- Unknown
- Channel Mode :
- Enhancement
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation :
- 150W
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Product Number :
- IXTY26
- Avalanche Energy Rating (Eas) :
- 300 mJ
- ECCN Code :
- EAR99
- Datasheets
- IXTY26P10T

P-Channel Tube 90m Ω @ 13A, 10V ±15V 3820pF @ 25V 52nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY26P10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3820pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 80A, its maximum pulsed drain current.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTY26P10T Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 26A
based on its rated peak drain current 80A.
a 100V drain to source voltage (Vdss)
IXTY26P10T Applications
There are a lot of IXYS
IXTY26P10T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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