IXTY26P10T
- Mfr.Part #
- IXTY26P10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 26A TO252
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs (Max) :
- ±15V
- Case Connection :
- DRAIN
- Series :
- TrenchP™
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- RoHS Status :
- ROHS3 Compliant
- Brand :
- IXYS
- Type :
- TrenchP Power MOSFET
- Tradename :
- TrenchP
- Supplier Device Package :
- TO-252
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Product Status :
- Active
- Package :
- Tube
- Terminal Position :
- Single
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 80A
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- Drain-source On Resistance-Max :
- 0.09Ohm
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 26A
- Base Product Number :
- IXTY26
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- P-Channel
- Published :
- 2012
- Pin Count :
- 4
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 6.22 mm
- Height :
- 2.38 mm
- Factory Lead Time :
- 24 Weeks
- Product Category :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Packaging :
- Tube
- RoHS :
- Details
- Maximum Operating Temperature :
- + 150 C
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 13A, 10V
- Power Dissipation-Max :
- 150W Tc
- Transistor Polarity :
- P-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Channel Mode :
- Enhancement
- Rise Time :
- 15 ns
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Mounting Style :
- SMD/SMT
- Number of Elements :
- 1
- Number of Channels :
- 1 Channel
- Mounting Type :
- Surface Mount
- Power Dissipation (Max) :
- 150W (Tc)
- Power Dissipation :
- 150W
- Minimum Operating Temperature :
- - 55 C
- Width :
- 6.73 mm
- FET Feature :
- --
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 3820pF @ 25V
- Manufacturer :
- IXYS
- Datasheets
- IXTY26P10T
IXTY26P10T Documents

P-Channel Tube 90m Ω @ 13A, 10V ±15V 3820pF @ 25V 52nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY26P10T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3820pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 80A, its maximum pulsed drain current.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTY26P10T Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 26A
based on its rated peak drain current 80A.
a 100V drain to source voltage (Vdss)
IXTY26P10T Applications
There are a lot of IXYS
IXTY26P10T applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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