IXTY1R6N50D2
- Mfr.Part #
- IXTY1R6N50D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 1.6A TO252
- Stock
- 49,659
- In Stock :
- 49,659
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Type :
- Depletion Mode MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- RoHS :
- Details
- Pin Count :
- 4
- Series :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 100W Tc
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- Continuous Drain Current (ID) :
- 1.6A
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 100W (Tc)
- Brand :
- IXYS
- Additional Feature :
- UL RECOGNIZED
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Power Dissipation :
- 100W
- Rds On (Max) @ Id, Vgs :
- 2.3 Ω @ 800mA, 0V
- Supplier Device Package :
- TO-252, (D-Pak)
- FET Type :
- N-Channel
- Channel Mode :
- Depletion
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 70 ns
- Number of Terminations :
- 2
- Product Type :
- MOSFET
- Transistor Application :
- AMPLIFIER
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Published :
- 2009
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 23.7nC @ 5V
- Length :
- 6.22 mm
- Vgs (Max) :
- ±20V
- Package :
- Tube
- Transistor Type :
- 1 N-Channel
- Minimum Operating Temperature :
- - 55 C
- Terminal Form :
- Gull wing
- Product Category :
- MOSFET
- Width :
- 6.73 mm
- Drain to Source Voltage (Vdss) :
- 500V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Product Number :
- IXTY1
- Terminal Position :
- Single
- Number of Elements :
- 1
- Factory Lead Time :
- 24 Weeks
- Transistor Element Material :
- SILICON
- FET Feature :
- Depletion Mode
- Manufacturer :
- IXYS
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Tc
- Pbfree Code :
- yes
- Mounting Style :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- --
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 645pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Transistor Polarity :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Height :
- 2.38 mm
- Datasheets
- IXTY1R6N50D2

N-Channel Tube 2.3 Ω @ 800mA, 0V ±20V 645pF @ 25V 23.7nC @ 5V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1R6N50D2 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 645pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.6A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).
IXTY1R6N50D2 Features
a continuous drain current (ID) of 1.6A
a 500V drain to source voltage (Vdss)
IXTY1R6N50D2 Applications
There are a lot of IXYS
IXTY1R6N50D2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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