IXTY1R4N60P
- Mfr.Part #
- IXTY1R4N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 1.4A TO252
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2006
- Pulsed Drain Current-Max (IDM) :
- 2.1 A
- Power Dissipation-Max :
- 50W Tc
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 600V
- Pin Count :
- 4
- Vgs (Max) :
- ±30V
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Fall Time (Typ) :
- 16 ns
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 600 V
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Series :
- PolarHV™
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Voltage (Vdss) :
- 600V
- Supplier Device Package :
- TO-252, (D-Pak)
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 9Ohm
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 25 ns
- FET Type :
- N-Channel
- Power Dissipation :
- 50W
- Threshold Voltage :
- 5.5V
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Power Dissipation (Max) :
- 50W (Tc)
- Number of Terminals :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 5.2nC @ 10V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Additional Feature :
- AVALANCHE RATED
- Current Rating :
- 1.4A
- Package Shape :
- RECTANGULAR
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 1.4A
- Element Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Terminal Form :
- Gull wing
- JEDEC-95 Code :
- TO-252AA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 9 Ω @ 700mA, 10V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Obsolete
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 5.5V @ 25μA
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Rise Time :
- 16ns
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Datasheets
- IXTY1R4N60P

N-Channel Tube 9 Ω @ 700mA, 10V ±30V 140pF @ 25V 5.2nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1R4N60P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 140pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.4A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 2.1 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5.5V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTY1R4N60P Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 2.1 A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)
IXTY1R4N60P Applications
There are a lot of IXYS
IXTY1R4N60P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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