IXTY1R4N60P

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Mfr.Part #
IXTY1R4N60P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 1.4A TO252
Stock
16
In Stock :
16

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2006
Pulsed Drain Current-Max (IDM) :
2.1 A
Power Dissipation-Max :
50W Tc
REACH SVHC :
No SVHC
Voltage - Rated DC :
600V
Pin Count :
4
Vgs (Max) :
±30V
Lead Free :
Lead Free
RoHS Status :
RoHS Compliant
Terminal Finish :
Matte Tin (Sn)
Fall Time (Typ) :
16 ns
JESD-609 Code :
e3
DS Breakdown Voltage-Min :
600 V
Case Connection :
DRAIN
Packaging :
Tube
Series :
PolarHV™
FET Feature :
--
JESD-30 Code :
R-PSSO-G2
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
Drain to Source Voltage (Vdss) :
600V
Supplier Device Package :
TO-252, (D-Pak)
Number of Pins :
3
Drain-source On Resistance-Max :
9Ohm
Mounting Type :
Surface Mount
Turn-Off Delay Time :
25 ns
FET Type :
N-Channel
Power Dissipation :
50W
Threshold Voltage :
5.5V
Current - Continuous Drain (Id) @ 25°C :
1.4A Tc
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
75 mJ
Power Dissipation (Max) :
50W (Tc)
Number of Terminals :
2
Gate Charge (Qg) (Max) @ Vgs :
5.2nC @ 10V
Transistor Element Material :
SILICON
Factory Lead Time :
8 Weeks
Additional Feature :
AVALANCHE RATED
Current Rating :
1.4A
Package Shape :
RECTANGULAR
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Qualification Status :
Not Qualified
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS Corporation
Surface Mount :
yes
Continuous Drain Current (ID) :
1.4A
Element Configuration :
Single
Reach Compliance Code :
Compliant
Terminal Form :
Gull wing
JEDEC-95 Code :
TO-252AA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
9 Ω @ 700mA, 10V
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Obsolete
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
600V
Vgs(th) (Max) @ Id :
5.5V @ 25μA
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Rise Time :
16ns
Number of Elements :
1
Number of Terminations :
2
Datasheets
IXTY1R4N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY1R4N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, IXTY1R4N60P pinout, IXTY1R4N60P datasheet PDF, IXTY1R4N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY1R4N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY1R4N60P


N-Channel Tube 9 Ω @ 700mA, 10V ±30V 140pF @ 25V 5.2nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1R4N60P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 140pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.4A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 2.1 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5.5V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTY1R4N60P Features


the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 2.1 A.
a threshold voltage of 5.5V
a 600V drain to source voltage (Vdss)


IXTY1R4N60P Applications


There are a lot of IXYS
IXTY1R4N60P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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