IXTY1R4N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

63W (Tc)

Additional Feature :

AVALANCHE RATED

Mounting Type :

Surface Mount

Mounting Style :

SMD/SMT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1.4A

Product Status :

Active

Power Dissipation-Max (Abs) :

63 W

Reach Compliance Code :

Compliant

Surface Mount :

yes

Fall Time (Typ) :

28 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Details

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

1000 V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

3A

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Gate Charge (Qg) (Max) @ Vgs :

17.8nC @ 10V

Transistor Type :

1 N-Channel

Width :

6.22 mm

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Rds On (Max) @ Id, Vgs :

11 Ω @ 500mA, 10V

Drain to Source Breakdown Voltage :

1kV

FET Feature :

--

JESD-30 Code :

R-PSSO-G2

Height :

2.38 mm

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Element Configuration :

Single

Published :

2011

Number of Terminations :

2

Product Category :

MOSFET

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Base Product Number :

IXTY1

Transistor Application :

SWITCHING

Turn-Off Delay Time :

65 ns

Drain to Source Voltage (Vdss) :

1000V

Channel Mode :

Enhancement

Series :

Polar™

Supplier Device Package :

TO-252, (D-Pak)

Package Shape :

RECTANGULAR

Configuration :

Single

Drain Current-Max (Abs) (ID) :

1.4 A

JESD-609 Code :

e3

Manufacturer :

IXYS

Factory Lead Time :

24 Weeks

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

100 mJ

Number of Elements :

1

Brand :

IXYS

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

63W

Length :

6.73 mm

Number of Terminals :

2

Power Dissipation-Max :

63W Tc

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Package :

Tube

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Lead Free :

Lead Free

Packaging :

Tube

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Rise Time :

35ns

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Drain-source On Resistance-Max :

11 Ω

Case Connection :

DRAIN

Minimum Operating Temperature :

- 55 C

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing