IXTY1R4N100P

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Mfr.Part #
IXTY1R4N100P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 1.4A TO252
Stock
23,490
In Stock :
23,490

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
100 mJ
Mounting Style :
SMD/SMT
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Rds On (Max) @ Id, Vgs :
11 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds :
450pF @ 25V
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Height :
2.38 mm
Gate Charge (Qg) (Max) @ Vgs :
17.8nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max :
11 Ω
Product Category :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Base Product Number :
IXTY1
Qualification Status :
Not Qualified
Series :
Polar™
Mount :
Surface Mount
Packaging :
Tube
Number of Channels :
1 Channel
Supplier Device Package :
TO-252, (D-Pak)
Power Dissipation :
63W
Mounting Type :
Surface Mount
Surface Mount :
yes
Continuous Drain Current (ID) :
1.4A
Lead Free :
Lead Free
Width :
6.22 mm
Number of Terminals :
2
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
1kV
Package Shape :
RECTANGULAR
Product Status :
Active
Terminal Position :
Single
Rise Time :
35ns
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
JESD-609 Code :
e3
RoHS :
Details
Number of Elements :
1
FET Feature :
--
Drain Current-Max (Abs) (ID) :
1.4 A
Power Dissipation-Max :
63W Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PSSO-G2
Manufacturer :
IXYS
Product Type :
MOSFET
Length :
6.73 mm
Case Connection :
DRAIN
Reach Compliance Code :
Compliant
FET Type :
N-Channel
Power Dissipation (Max) :
63W (Tc)
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
65 ns
Maximum Operating Temperature :
+ 150 C
Package :
Tube
Channel Mode :
Enhancement
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Transistor Type :
1 N-Channel
Polarity/Channel Type :
N-Channel
Pin Count :
3
Published :
2011
Terminal Finish :
Matte Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Brand :
IXYS
Power Dissipation-Max (Abs) :
63 W
Fall Time (Typ) :
28 ns
Factory Lead Time :
24 Weeks
DS Breakdown Voltage-Min :
1000 V
Number of Terminations :
2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
3A
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
1000V
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
1.4A Tc
Datasheets
IXTY1R4N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY1R4N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, IXTY1R4N100P pinout, IXTY1R4N100P datasheet PDF, IXTY1R4N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY1R4N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY1R4N100P


N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1R4N100P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 100 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 25V.This device conducts a continuous drain current (ID) of 1.4A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 1.4 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 3A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTY1R4N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)


IXTY1R4N100P Applications


There are a lot of IXYS
IXTY1R4N100P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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