IXTY1R4N100P

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Mfr.Part #
IXTY1R4N100P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 1.4A TO252
Stock
23,490
In Stock :
23,490

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Mode :
Enhancement
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
Rds On (Max) @ Id, Vgs :
11 Ω @ 500mA, 10V
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
1000 V
Turn-Off Delay Time :
65 ns
JESD-30 Code :
R-PSSO-G2
Base Product Number :
IXTY1
RoHS :
Details
Element Configuration :
Single
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Power Dissipation (Max) :
63W (Tc)
Surface Mount :
yes
Factory Lead Time :
24 Weeks
Mounting Style :
SMD/SMT
Package :
Tube
Terminal Finish :
Matte Tin (Sn)
Rise Time :
35ns
Packaging :
Tube
Brand :
IXYS
Product Type :
MOSFET
Drain-source On Resistance-Max :
11 Ω
Gate Charge (Qg) (Max) @ Vgs :
17.8nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Drain to Source Voltage (Vdss) :
1000V
Power Dissipation-Max (Abs) :
63 W
Qualification Status :
Not Qualified
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
1.4 A
Transistor Type :
1 N-Channel
Drain to Source Breakdown Voltage :
1kV
Number of Channels :
1 Channel
Power Dissipation-Max :
63W Tc
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Power Dissipation :
63W
Number of Terminations :
2
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
100 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Maximum Operating Temperature :
+ 150 C
Published :
2011
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
1.4A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
6.73 mm
FET Feature :
--
Pin Count :
3
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
3A
Manufacturer :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Width :
6.22 mm
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
1.4A Tc
Pbfree Code :
yes
Fall Time (Typ) :
28 ns
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Product Category :
MOSFET
Product Status :
Active
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
450pF @ 25V
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-252, (D-Pak)
Height :
2.38 mm
Series :
Polar™
Mount :
Surface Mount
Transistor Polarity :
N-Channel
Number of Terminals :
2
Vgs (Max) :
±20V
Datasheets
IXTY1R4N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY1R4N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1 Channel, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, IXTY1R4N100P pinout, IXTY1R4N100P datasheet PDF, IXTY1R4N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY1R4N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY1R4N100P


N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1R4N100P Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 100 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 25V.This device conducts a continuous drain current (ID) of 1.4A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 1.4 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 3A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTY1R4N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)


IXTY1R4N100P Applications


There are a lot of IXYS
IXTY1R4N100P applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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