IXTY1R4N100P
- Mfr.Part #
- IXTY1R4N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1.4A TO252
- Stock
- 23,490
- In Stock :
- 23,490
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Channel Mode :
- Enhancement
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- - 55 C
- Rds On (Max) @ Id, Vgs :
- 11 Ω @ 500mA, 10V
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 1000 V
- Turn-Off Delay Time :
- 65 ns
- JESD-30 Code :
- R-PSSO-G2
- Base Product Number :
- IXTY1
- RoHS :
- Details
- Element Configuration :
- Single
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 63W (Tc)
- Surface Mount :
- yes
- Factory Lead Time :
- 24 Weeks
- Mounting Style :
- SMD/SMT
- Package :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- Rise Time :
- 35ns
- Packaging :
- Tube
- Brand :
- IXYS
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 11 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 17.8nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 1000V
- Power Dissipation-Max (Abs) :
- 63 W
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 1.4 A
- Transistor Type :
- 1 N-Channel
- Drain to Source Breakdown Voltage :
- 1kV
- Number of Channels :
- 1 Channel
- Power Dissipation-Max :
- 63W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 63W
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 150 C
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 1.4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.73 mm
- FET Feature :
- --
- Pin Count :
- 3
- Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 3A
- Manufacturer :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Width :
- 6.22 mm
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Tc
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 28 ns
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Product Category :
- MOSFET
- Product Status :
- Active
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- TO-252, (D-Pak)
- Height :
- 2.38 mm
- Series :
- Polar™
- Mount :
- Surface Mount
- Transistor Polarity :
- N-Channel
- Number of Terminals :
- 2
- Vgs (Max) :
- ±20V
- Datasheets
- IXTY1R4N100P

N-Channel Tube 11 Ω @ 500mA, 10V ±20V 450pF @ 25V 17.8nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1R4N100P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 100 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 450pF @ 25V.This device conducts a continuous drain current (ID) of 1.4A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 1.4 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 3A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 1000 V.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTY1R4N100P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)
IXTY1R4N100P Applications
There are a lot of IXYS
IXTY1R4N100P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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