IXTY1N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

DS Breakdown Voltage-Min :

800 V

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

0.75A

Terminal Position :

Single

Vgs (Max) :

±20V

Base Product Number :

IXTY1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

24 Weeks

Power Dissipation (Max) :

40W (Tc)

Number of Pins :

3

Package :

Box

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-252AA

Subcategory :

MOSFETs

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Brand :

IXYS

Channel Mode :

Enhancement

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Turn-Off Delay Time :

40 ns

Additional Feature :

AVALANCHE RATED

Mounting Style :

SMD/SMT

Product Status :

Active

Supplier Device Package :

TO-252AA

Element Configuration :

Single

Width :

6.22 mm

Series :

--

RoHS :

Details

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 25μA

Avalanche Energy Rating (Eas) :

100 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

11 Ω

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

750mA Tc

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Transistor Type :

1 N-Channel

JESD-30 Code :

R-PSSO-G2

Configuration :

Single

Pin Count :

4

Continuous Drain Current (ID) :

750mA

Power Dissipation :

40W

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

3A

Drain to Source Voltage (Vdss) :

800V

Gate to Source Voltage (Vgs) :

20V

FET Feature :

--

Rise Time :

19ns

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

40W Tc

Rds On (Max) @ Id, Vgs :

11 Ω @ 500mA, 10V

Drain to Source Breakdown Voltage :

800V

Number of Terminals :

2

Surface Mount :

yes

Minimum Operating Temperature :

- 55 C

Reach Compliance Code :

Compliant

Product Type :

MOSFET

Published :

2003

Fall Time (Typ) :

28 ns

Height :

2.38 mm

RoHS Status :

ROHS3 Compliant

Length :

6.73 mm

Pbfree Code :

yes

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 25V

Maximum Operating Temperature :

+ 150 C

Mount :

Surface Mount

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON