IXTY1N80

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Mfr.Part #
IXTY1N80
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 800V 750MA TO252AA
Stock
7,400
In Stock :
7,400

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 10V
Rds On (Max) @ Id, Vgs :
11 Ω @ 500mA, 10V
JEDEC-95 Code :
TO-252AA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
Gull wing
Manufacturer :
IXYS
Number of Terminations :
2
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Compliant
Product Status :
Active
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
100 mJ
FET Type :
N-Channel
Transistor Element Material :
SILICON
Product Category :
MOSFET
Number of Channels :
1 Channel
Height :
2.38 mm
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
24 Weeks
Published :
2003
Transistor Type :
1 N-Channel
ECCN Code :
EAR99
Packaging :
Bulk
Power Dissipation :
40W
Base Product Number :
IXTY1
Surface Mount :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
800 V
Case Connection :
DRAIN
Vgs (Max) :
±20V
Turn-Off Delay Time :
40 ns
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Drain to Source Breakdown Voltage :
800V
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
750mA
Number of Terminals :
2
Terminal Position :
Single
Gate to Source Voltage (Vgs) :
20V
Drain to Source Voltage (Vdss) :
800V
Series :
--
Brand :
IXYS
Pulsed Drain Current-Max (IDM) :
3A
Length :
6.73 mm
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
40W (Tc)
Element Configuration :
Single
Width :
6.22 mm
Package :
Box
Mounting Type :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Channel Mode :
Enhancement
Minimum Operating Temperature :
- 55 C
Rise Time :
19ns
Product Type :
MOSFET
FET Feature :
--
Fall Time (Typ) :
28 ns
Mount :
Surface Mount
Subcategory :
MOSFETs
Number of Pins :
3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
0.75A
Input Capacitance (Ciss) (Max) @ Vds :
220pF @ 25V
Supplier Device Package :
TO-252AA
Transistor Polarity :
N-Channel
Pin Count :
4
Number of Elements :
1
Mounting Style :
SMD/SMT
Power Dissipation-Max :
40W Tc
Drain-source On Resistance-Max :
11 Ω
Current - Continuous Drain (Id) @ 25°C :
750mA Tc
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IXTY1N80 pinout, IXTY1N80 datasheet PDF, IXTY1N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY1N80


N-Channel Bulk 11 Ω @ 500mA, 10V ±20V 220pF @ 25V 8.5nC @ 10V 800V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1N80 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 100 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 220pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 750mA.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.0.75A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.Peak drain current for this device is 3A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTY1N80 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 3A.
a 800V drain to source voltage (Vdss)


IXTY1N80 Applications


There are a lot of IXYS
IXTY1N80 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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