IXTY1N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

15 Ω @ 500mA, 10V

Power Dissipation-Max :

50W Tc

Pin Count :

4

Lead Free :

Lead Free

Number of Terminals :

2

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

55 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

1.8A

Configuration :

Single

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

100 mJ

Base Product Number :

IXTY1

Manufacturer :

IXYS

Product Category :

MOSFET

Vgs (Max) :

±20V

Power Dissipation :

50W

Drain Current-Max (Abs) (ID) :

1A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

JEDEC-95 Code :

TO-252AA

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15.5nC @ 10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

50W (Tc)

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Matte Tin (Sn)

Series :

Polar™

Element Configuration :

Single

Number of Elements :

1

Continuous Drain Current (ID) :

1A

Mounting Type :

Surface Mount

FET Feature :

--

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Width :

6.22 mm

Published :

2008

Number of Channels :

1 Channel

Package :

Tube

Rise Time :

26ns

Length :

6.73 mm

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

331pF @ 25V

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

1000V

Case Connection :

DRAIN

Transistor Type :

1 N-Channel

Power Dissipation-Max (Abs) :

50 W

DS Breakdown Voltage-Min :

1000 V

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Height :

2.38 mm

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

24 ns

Mount :

Surface Mount

Number of Terminations :

2

Mounting Style :

SMD/SMT

Product Type :

MOSFET

Factory Lead Time :

24 Weeks

ECCN Code :

EAR99

Drain-source On Resistance-Max :

15 Ω

Supplier Device Package :

TO-252, (D-Pak)

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

1kV