IXTY1N100P

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Mfr.Part #
IXTY1N100P
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 1000V 1A TO252
Stock
25,604
In Stock :
25,604

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tube
Qualification Status :
Not Qualified
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Drain Current-Max (Abs) (ID) :
1A
Turn-Off Delay Time :
55 ns
Power Dissipation (Max) :
50W (Tc)
Continuous Drain Current (ID) :
1A
Fall Time (Typ) :
24 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
100 mJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Brand :
IXYS
Transistor Polarity :
N-Channel
Reach Compliance Code :
Compliant
Surface Mount :
yes
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Number of Terminals :
2
Length :
6.73 mm
JESD-30 Code :
R-PSSO-G2
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Pulsed Drain Current-Max (IDM) :
1.8A
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
ROHS3 Compliant
Product Type :
MOSFET
Case Connection :
DRAIN
FET Type :
N-Channel
Number of Elements :
1
Pbfree Code :
yes
Terminal Form :
Gull wing
Channel Mode :
Enhancement
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Supplier Device Package :
TO-252, (D-Pak)
Series :
Polar™
Mounting Style :
SMD/SMT
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Product Status :
Active
Pin Count :
4
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Polarity/Channel Type :
N-Channel
Number of Terminations :
2
Rds On (Max) @ Id, Vgs :
15 Ω @ 500mA, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
331pF @ 25V
Power Dissipation-Max (Abs) :
50 W
Power Dissipation-Max :
50W Tc
DS Breakdown Voltage-Min :
1000 V
Lead Free :
Lead Free
Additional Feature :
AVALANCHE RATED
Power Dissipation :
50W
Drain-source On Resistance-Max :
15 Ω
FET Feature :
--
Rise Time :
26ns
Configuration :
Single
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Height :
2.38 mm
Published :
2008
Package Shape :
RECTANGULAR
Mount :
Surface Mount
JEDEC-95 Code :
TO-252AA
Transistor Type :
1 N-Channel
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Manufacturer :
IXYS
Drain to Source Breakdown Voltage :
1kV
Vgs (Max) :
±20V
Width :
6.22 mm
Base Product Number :
IXTY1
Drain to Source Voltage (Vdss) :
1000V
ECCN Code :
EAR99
Factory Lead Time :
24 Weeks
Datasheets
IXTY1N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N100P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Number of Channels:1 Channel, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IXTY1N100P pinout, IXTY1N100P datasheet PDF, IXTY1N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY1N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY1N100P


N-Channel Tube 15 Ω @ 500mA, 10V ±20V 331pF @ 25V 15.5nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1N100P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 331pF @ 25V.This device has a continuous drain current (ID) of [1A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.A device's drain current is its maximum continuous current, and this device's drain current is 1A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.A maximum pulsed drain current of 1.8A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTY1N100P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)


IXTY1N100P Applications


There are a lot of IXYS
IXTY1N100P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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