IXTY1N100P
- Mfr.Part #
- IXTY1N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1A TO252
- Stock
- 25,604
- In Stock :
- 25,604
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Drain Current-Max (Abs) (ID) :
- 1A
- Turn-Off Delay Time :
- 55 ns
- Power Dissipation (Max) :
- 50W (Tc)
- Continuous Drain Current (ID) :
- 1A
- Fall Time (Typ) :
- 24 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Brand :
- IXYS
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- Compliant
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Number of Terminals :
- 2
- Length :
- 6.73 mm
- JESD-30 Code :
- R-PSSO-G2
- Maximum Operating Temperature :
- + 150 C
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Channel Mode :
- Enhancement
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Supplier Device Package :
- TO-252, (D-Pak)
- Series :
- Polar™
- Mounting Style :
- SMD/SMT
- Gate Charge (Qg) (Max) @ Vgs :
- 15.5nC @ 10V
- Product Status :
- Active
- Pin Count :
- 4
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 15 Ω @ 500mA, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 331pF @ 25V
- Power Dissipation-Max (Abs) :
- 50 W
- Power Dissipation-Max :
- 50W Tc
- DS Breakdown Voltage-Min :
- 1000 V
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 50W
- Drain-source On Resistance-Max :
- 15 Ω
- FET Feature :
- --
- Rise Time :
- 26ns
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Height :
- 2.38 mm
- Published :
- 2008
- Package Shape :
- RECTANGULAR
- Mount :
- Surface Mount
- JEDEC-95 Code :
- TO-252AA
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Drain to Source Breakdown Voltage :
- 1kV
- Vgs (Max) :
- ±20V
- Width :
- 6.22 mm
- Base Product Number :
- IXTY1
- Drain to Source Voltage (Vdss) :
- 1000V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 24 Weeks
- Datasheets
- IXTY1N100P

N-Channel Tube 15 Ω @ 500mA, 10V ±20V 331pF @ 25V 15.5nC @ 10V 1000V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1N100P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 331pF @ 25V.This device has a continuous drain current (ID) of [1A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.A device's drain current is its maximum continuous current, and this device's drain current is 1A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.A maximum pulsed drain current of 1.8A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTY1N100P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)
IXTY1N100P Applications
There are a lot of IXYS
IXTY1N100P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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