IXTY18P10T
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- Mfr.Part #
- IXTY18P10T
- Manufacturer
- Littelfuse
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 18A TO252
- Stock
- 68
- In Stock ：
- 68
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Factory Lead Time :
- 24 Weeks
- Channel Mode :
- Enhancement
- Continuous Drain Current (ID) :
- 18A
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Pin Count :
- 4
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- -
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 9A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 83W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Published :
- 2012
- Turn-Off Delay Time :
- 44 ns
- Maximum Operating Temperature :
- + 150 C
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Product Status :
- Active
- RoHS :
- Details
- Supplier Device Package :
- TO-252AA
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2100pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 26ns
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- FET Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 60A
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.12Ohm
- DS Breakdown Voltage-Min :
- 100V
- Number of Terminations :
- 2
- Transistor Type :
- 1 P-Channel
- Reach Compliance Code :
- Unknown
- Series :
- TrenchP™
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- IXTY18
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Mounting Type :
- Surface Mount
- Product Category :
- MOSFET
- Vgs (Max) :
- ±15V
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 83W (Tc)
- Fall Time (Typ) :
- 22 ns
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- P-Channel
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Pure Tin (Sn)
- Mounting Style :
- SMD/SMT
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 15V
- Number of Elements :
- 1
- Datasheets
- IXTY18P10T
IXTY18P10T Documents
P-Channel Tube 120m Ω @ 9A, 10V ±15V 2100pF @ 25V 39nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY18P10T Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2100pF @ 25V.This device has a continuous drain current (ID) of [18A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTY18P10T Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 18A
the turn-off delay time is 44 ns
based on its rated peak drain current 60A.
a 100V drain to source voltage (Vdss)
IXTY18P10T Applications
There are a lot of IXYS
IXTY18P10T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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