IXTY12N06T

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Mfr.Part #
IXTY12N06T
Manufacturer
Littelfuse
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 12A TO252
Stock
3,998
In Stock :
3,998

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Type :
MOSFET
Power Dissipation-Max (Abs) :
33 W
Terminal Position :
Single
Terminal Form :
Gull wing
Power Dissipation (Max) :
33W (Tc)
Reach Compliance Code :
Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Product Category :
MOSFET
Packaging :
Tube
Published :
2008
FET Feature :
--
Vgs(th) (Max) @ Id :
4V @ 25μA
Number of Terminals :
2
Power Dissipation :
33W
RoHS Status :
RoHS Compliant
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 175 C
Transistor Application :
SWITCHING
Manufacturer :
IXYS
Package :
Tube
Drain to Source Voltage (Vdss) :
60V
Rds On (Max) @ Id, Vgs :
85m Ω @ 6A, 10V
JESD-30 Code :
R-PSSO-G2
Supplier Device Package :
TO-252
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Surface Mount :
yes
Number of Terminations :
2
Transistor Polarity :
N-Channel
Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Polarity/Channel Type :
N-Channel
Series :
TrenchMV™
Input Capacitance (Ciss) (Max) @ Vds :
256pF @ 25V
Gate to Source Voltage (Vgs) :
20V
Drain-source On Resistance-Max :
0.085Ohm
Drain Current-Max (Abs) (ID) :
12 A
Operating Temperature :
-55°C~175°C TJ
Power Dissipation-Max :
33W Tc
Additional Feature :
AVALANCHE RATED
Continuous Drain Current (ID) :
12A
Number of Elements :
1
Mounting Style :
SMD/SMT
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
60 V
Gate Charge (Qg) (Max) @ Vgs :
3.4nC @ 10V
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Package Shape :
RECTANGULAR
Pulsed Drain Current-Max (IDM) :
30A
Avalanche Energy Rating (Eas) :
20 mJ
Number of Channels :
1 Channel
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Surface Mount
FET Type :
N-Channel
JEDEC-95 Code :
TO-252AB
Drain to Source Breakdown Voltage :
60V
Brand :
IXYS
Product Status :
Obsolete
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Element Configuration :
Single
JESD-609 Code :
e3
Pin Count :
4
Transistor Type :
1 N-Channel
ECCN Code :
EAR99
Datasheets
IXTY12N06T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTY12N06T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Mounting Type:Surface Mount, IXTY12N06T pinout, IXTY12N06T datasheet PDF, IXTY12N06T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTY12N06T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTY12N06T


N-Channel Tube 85m Ω @ 6A, 10V ±20V 256pF @ 25V 3.4nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY12N06T Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 20 mJ.The maximum input capacitance of this device is 256pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 12 A.There is no pulsed drain current maximum for this device based on its rated peak drain current 30A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 60 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTY12N06T Features


the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 30A.
a 60V drain to source voltage (Vdss)


IXTY12N06T Applications


There are a lot of IXYS
IXTY12N06T applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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