IXTU5N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

500 V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Series :

PolarHV™

Product Status :

Active

Power Dissipation :

89W

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

Single

Package Shape :

RECTANGULAR

Mount :

Surface Mount

Fall Time (Typ) :

24 ns

Continuous Drain Current (ID) :

4.8A

Polarity/Channel Type :

N-Channel

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSIP-T3

Case Connection :

DRAIN

Published :

2006

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

89W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-252, (D-Pak)

Drain to Source Breakdown Voltage :

500V

Pulsed Drain Current-Max (IDM) :

10A

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Package :

Tube

Additional Feature :

AVALANCHE RATED

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5.5V @ 50μA

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.4A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

12.6nC @ 10V

Power Dissipation-Max (Abs) :

89 W

Turn-Off Delay Time :

65 ns

Number of Terminals :

3

JEDEC-95 Code :

TO-251

Avalanche Energy Rating (Eas) :

250 mJ

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Rise Time :

26ns

Drain Current-Max (Abs) (ID) :

5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Product Number :

IXTU5

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

3

Drain-source On Resistance-Max :

1.4 Ω

Manufacturer :

IXYS Corporation

Power Dissipation-Max :

89W Tc

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel