IXTU01N100

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Mfr.Part #
IXTU01N100
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 1000V 100MA TO251
Stock
396
In Stock :
396

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
HTS Code :
8541.29.00.95
Package :
Tube
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
1000V
Rise Time :
12ns
Transistor Polarity :
N-Channel
Current Rating :
100mA
Mounting Type :
Through Hole
Series :
--
Manufacturer :
IXYS
Configuration :
Single
Mount :
Through Hole
Drain to Source Breakdown Voltage :
1kV
Pbfree Code :
yes
Case Connection :
DRAIN
Base Product Number :
IXTU01
Product Type :
MOSFET
Power Dissipation-Max :
25W Tc
Height :
6.22 mm
Number of Pins :
3
Drain Current-Max (Abs) (ID) :
0.1A
Factory Lead Time :
24 Weeks
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
0.4A
Reach Compliance Code :
Unknown
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Transistor Application :
SWITCHING
Brand :
IXYS
Width :
2.38 mm
RoHS :
Details
Element Configuration :
Single
Published :
2001
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Power Dissipation :
25W
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Input Capacitance (Ciss) (Max) @ Vds :
54pF @ 25V
Supplier Device Package :
TO-251
Mounting Style :
Through Hole
Transistor Type :
1 N-Channel
Length :
6.73 mm
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
6.9nC @ 10V
ECCN Code :
EAR99
Number of Channels :
1 Channel
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
4.5V @ 25μA
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
Voltage - Rated DC :
1kV
Product Category :
MOSFET
Continuous Drain Current (ID) :
100mA
Channel Mode :
Enhancement
Rds On (Max) @ Id, Vgs :
80 Ω @ 100mA, 10V
Power Dissipation (Max) :
25W (Tc)
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Fall Time (Typ) :
28 ns
Pin Count :
3
Turn-Off Delay Time :
28 ns
Datasheets
IXTU01N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N100 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXTU01N100 pinout, IXTU01N100 datasheet PDF, IXTU01N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU01N100


N-Channel Tube 80 Ω @ 100mA, 10V ±20V 54pF @ 25V 6.9nC @ 10V 1000V TO-251-3 Short Leads, IPak, TO-251AA

IXTU01N100 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 54pF @ 25V.This device has a continuous drain current (ID) of [100mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.A device's drain current is its maximum continuous current, and this device's drain current is 0.1A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28 ns.A maximum pulsed drain current of 0.4A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTU01N100 Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 1000V drain to source voltage (Vdss)


IXTU01N100 Applications


There are a lot of IXYS
IXTU01N100 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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