IXTU02N50D
- Mfr.Part #
- IXTU02N50D
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 200MA TO251
- Stock
- 453
- In Stock :
- 453
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- Single
- DS Breakdown Voltage-Min :
- 500 V
- Length :
- 6.73 mm
- Element Configuration :
- Single
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 200mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- Depletion Mode
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Product Category :
- MOSFET
- Reach Compliance Code :
- Compliant
- Transistor Element Material :
- SILICON
- Product :
- MOSFET Small Signal
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 0.8A
- RoHS :
- Details
- Terminal Position :
- Single
- Channel Mode :
- Depletion
- Product Status :
- Active
- Fall Time (Typ) :
- 4 ns
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- Height :
- 6.22 mm
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 50mA, 0V
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-251AA
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 4ns
- Power Dissipation :
- 1.1W
- Mounting Style :
- Through Hole
- HTS Code :
- 8541.29.00.95
- Published :
- 2006
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 24 Weeks
- Surface Mount :
- No
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Turn-Off Delay Time :
- 28 ns
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Product Type :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Supplier Device Package :
- TO-251
- FET Type :
- N-Channel
- Width :
- 2.38 mm
- Base Product Number :
- IXTU02
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 25μA
- Drain to Source Voltage (Vdss) :
- 500V
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 30 Ω
- Series :
- --
- FET Feature :
- Depletion Mode
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- THROUGH-HOLE
- Subcategory :
- MOSFETs
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- Datasheets
- IXTU02N50D

N-Channel Tube 30 Ω @ 50mA, 0V ±20V 120pF @ 25V 500V TO-251-3 Short Leads, IPak, TO-251AA
IXTU02N50D Overview
A device's maximum input capacitance is 120pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 0.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 28 ns.Its maximum pulsed drain current is 0.8A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTU02N50D Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)
IXTU02N50D Applications
There are a lot of IXYS
IXTU02N50D applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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