IXTU02N50D

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Mfr.Part #
IXTU02N50D
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 500V 200MA TO251
Stock
453
In Stock :
453

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
0.2A
Width :
2.38 mm
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Power Dissipation-Max :
1.1W Ta 25W Tc
Transistor Type :
1 N-Channel
Supplier Device Package :
TO-251
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Height :
6.22 mm
Manufacturer :
IXYS
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Terminal Form :
THROUGH-HOLE
Product Type :
MOSFET
DS Breakdown Voltage-Min :
500 V
Polarity/Channel Type :
N-Channel
Published :
2006
Fall Time (Typ) :
4 ns
Product :
MOSFET Small Signal
Operating Mode :
Depletion Mode
Series :
--
ECCN Code :
EAR99
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
N-Channel
Pulsed Drain Current-Max (IDM) :
0.8A
FET Feature :
Depletion Mode
Turn-Off Delay Time :
28 ns
Number of Channels :
1 Channel
Factory Lead Time :
24 Weeks
Case Connection :
DRAIN
Product Category :
MOSFET
RoHS :
Details
Power Dissipation :
1.1W
Continuous Drain Current (ID) :
200mA
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
500V
Product Status :
Active
Number of Terminations :
3
Transistor Element Material :
SILICON
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number :
IXTU02
Drain to Source Voltage (Vdss) :
500V
Maximum Operating Temperature :
+ 150 C
Mounting Style :
Through Hole
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
30 Ω @ 50mA, 0V
Brand :
IXYS
Number of Terminals :
3
Drain-source On Resistance-Max :
30 Ω
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Length :
6.73 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
200mA Tc
Pbfree Code :
yes
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Vgs(th) (Max) @ Id :
5V @ 25μA
HTS Code :
8541.29.00.95
Rise Time :
4ns
Surface Mount :
No
Reach Compliance Code :
Compliant
Subcategory :
MOSFETs
Channel Mode :
Depletion
Vgs (Max) :
±20V
JEDEC-95 Code :
TO-251AA
JESD-30 Code :
R-PSIP-T3
FET Type :
N-Channel
Terminal Position :
Single
Datasheets
IXTU02N50D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU02N50D from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, IXTU02N50D pinout, IXTU02N50D datasheet PDF, IXTU02N50D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU02N50D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU02N50D


N-Channel Tube 30 Ω @ 50mA, 0V ±20V 120pF @ 25V 500V TO-251-3 Short Leads, IPak, TO-251AA

IXTU02N50D Overview


A device's maximum input capacitance is 120pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 0.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 28 ns.Its maximum pulsed drain current is 0.8A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTU02N50D Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)


IXTU02N50D Applications


There are a lot of IXYS
IXTU02N50D applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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