IXTU02N50D
- Mfr.Part #
- IXTU02N50D
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 200MA TO251
- Stock
- 453
- In Stock :
- 453
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Power Dissipation :
- 1.1W
- DS Breakdown Voltage-Min :
- 500 V
- Polarity/Channel Type :
- N-Channel
- Width :
- 2.38 mm
- Length :
- 6.73 mm
- Drain Current-Max (Abs) (ID) :
- 0.2A
- JESD-30 Code :
- R-PSIP-T3
- Supplier Device Package :
- TO-251
- Series :
- --
- HTS Code :
- 8541.29.00.95
- Reach Compliance Code :
- Compliant
- Product :
- MOSFET Small Signal
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package :
- Tube
- Rise Time :
- 4ns
- FET Feature :
- Depletion Mode
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 200mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Mounting Style :
- Through Hole
- RoHS :
- Details
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 30 Ω
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Published :
- 2006
- Height :
- 6.22 mm
- Product Type :
- MOSFET
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Product Status :
- Active
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Transistor Polarity :
- N-Channel
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id :
- 5V @ 25μA
- Drain to Source Breakdown Voltage :
- 500V
- Drain to Source Voltage (Vdss) :
- 500V
- JEDEC-95 Code :
- TO-251AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Turn-Off Delay Time :
- 28 ns
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- THROUGH-HOLE
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 30 Ω @ 50mA, 0V
- Number of Channels :
- 1 Channel
- Factory Lead Time :
- 24 Weeks
- Manufacturer :
- IXYS
- Product Category :
- MOSFET
- ECCN Code :
- EAR99
- Subcategory :
- MOSFETs
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Pin Count :
- 3
- Terminal Position :
- Single
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Number of Terminals :
- 3
- Base Product Number :
- IXTU02
- Operating Mode :
- Depletion Mode
- Maximum Operating Temperature :
- + 150 C
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 4 ns
- Brand :
- IXYS
- Channel Mode :
- Depletion
- Pulsed Drain Current-Max (IDM) :
- 0.8A
- Datasheets
- IXTU02N50D

N-Channel Tube 30 Ω @ 50mA, 0V ±20V 120pF @ 25V 500V TO-251-3 Short Leads, IPak, TO-251AA
IXTU02N50D Overview
A device's maximum input capacitance is 120pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 0.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 28 ns.Its maximum pulsed drain current is 0.8A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTU02N50D Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.8A.
a 500V drain to source voltage (Vdss)
IXTU02N50D Applications
There are a lot of IXYS
IXTU02N50D applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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