IXTU2N80P

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Mfr.Part #
IXTU2N80P
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 2A TO251
Stock
43,605
In Stock :
43,605

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
2A
Element Configuration :
Single
Terminal Position :
Single
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Terminal Form :
THROUGH-HOLE
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
28 ns
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
800 V
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Power Dissipation-Max :
70W Tc
Drain to Source Breakdown Voltage :
800V
Manufacturer :
IXYS Corporation
Power Dissipation :
70W
Additional Feature :
AVALANCHE RATED
Gate Charge (Qg) (Max) @ Vgs :
10.6nC @ 10V
FET Type :
N-Channel
Published :
2006
Mounting Type :
Through Hole
Mount :
Through Hole
JESD-30 Code :
R-PSIP-T3
JEDEC-95 Code :
TO-251AA
Avalanche Energy Rating (Eas) :
100 mJ
Drain-source On Resistance-Max :
6Ohm
RoHS Status :
RoHS Compliant
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Rds On (Max) @ Id, Vgs :
6 Ω @ 1A, 10V
Product Status :
Obsolete
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Surface Mount :
No
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
5.5V @ 50μA
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
4A
Number of Elements :
1
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
30V
Vgs (Max) :
±30V
Drain Current-Max (Abs) (ID) :
2A
Package Shape :
RECTANGULAR
Rise Time :
35ns
Power Dissipation (Max) :
70W (Tc)
Transistor Element Material :
SILICON
Turn-Off Delay Time :
53 ns
Supplier Device Package :
TO-251
Number of Terminations :
3
Package :
Tube
Drain to Source Voltage (Vdss) :
800V
Series :
PolarHV™
Pin Count :
3
Datasheets
IXTU2N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU2N80P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXTU2N80P pinout, IXTU2N80P datasheet PDF, IXTU2N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU2N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU2N80P


N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA

IXTU2N80P Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 440pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.A device can conduct a maximum continuous current of [2A] according to its drain current.It is [53 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTU2N80P Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
a 800V drain to source voltage (Vdss)


IXTU2N80P Applications


There are a lot of IXYS
IXTU2N80P applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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