IXTU2N80P
- Mfr.Part #
- IXTU2N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO251
- Stock
- 43,605
- In Stock :
- 43,605
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2006
- Drain to Source Voltage (Vdss) :
- 800V
- Gate Charge (Qg) (Max) @ Vgs :
- 10.6nC @ 10V
- Power Dissipation-Max :
- 70W Tc
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 53 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 3
- FET Feature :
- --
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5.5V @ 50μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 800V
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 800 V
- Continuous Drain Current (ID) :
- 2A
- Fall Time (Typ) :
- 28 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Single
- Package :
- Tube
- Power Dissipation :
- 70W
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 4A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSIP-T3
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-251AA
- Surface Mount :
- No
- Product Status :
- Obsolete
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Drain-source On Resistance-Max :
- 6Ohm
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 70W (Tc)
- Rise Time :
- 35ns
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Terminal Form :
- THROUGH-HOLE
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Supplier Device Package :
- TO-251
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 1A, 10V
- Reach Compliance Code :
- Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 2A
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- PolarHV™
- Datasheets
- IXTU2N80P

N-Channel Tube 6 Ω @ 1A, 10V ±30V 440pF @ 25V 10.6nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA
IXTU2N80P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 440pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.A device can conduct a maximum continuous current of [2A] according to its drain current.It is [53 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 4A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTU2N80P Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 4A.
a 800V drain to source voltage (Vdss)
IXTU2N80P Applications
There are a lot of IXYS
IXTU2N80P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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