IXTU05N100
- Mfr.Part #
- IXTU05N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 750MA TO251
- Stock
- 35,645
- In Stock :
- 35,645
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSIP-T3
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 1kV
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 17 Ω
- Pulsed Drain Current-Max (IDM) :
- 3A
- Base Product Number :
- IXTU05
- Power Dissipation (Max) :
- 40W (Tc)
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Package Shape :
- RECTANGULAR
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Configuration :
- Single
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 10V
- Terminal Position :
- Single
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 40W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 750mA Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Drain to Source Voltage (Vdss) :
- 1000V
- Power Dissipation :
- 40W
- Rds On (Max) @ Id, Vgs :
- 17 Ω @ 375mA, 10V
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- RoHS :
- Details
- Number of Elements :
- 1
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- --
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package :
- TO-251
- Terminal Form :
- THROUGH-HOLE
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- JEDEC-95 Code :
- TO-251
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 1000 V
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 750mA
- Brand :
- IXYS
- Transistor Type :
- 1 N-Channel
- Published :
- 2012
- Power Dissipation-Max (Abs) :
- 40 W
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- Datasheets
- IXTU05N100
IXTU05N100 Documents

N-Channel Tube 17 Ω @ 375mA, 10V ±30V 260pF @ 25V 7.8nC @ 10V 1000V TO-251-3 Short Leads, IPak, TO-251AA
IXTU05N100 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 100 mJ.A device's maximal input capacitance is 260pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 750mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 3A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTU05N100 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 1kV voltage
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)
IXTU05N100 Applications
There are a lot of IXYS
IXTU05N100 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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