IXTU05N100
- Mfr.Part #
- IXTU05N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 750MA TO251
- Stock
- 35,645
- In Stock :
- 35,645
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 750mA Tc
- Pulsed Drain Current-Max (IDM) :
- 3A
- Mounting Type :
- Through Hole
- Series :
- --
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 40 W
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- FET Type :
- N-Channel
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Power Dissipation :
- 40W
- Manufacturer :
- IXYS
- Transistor Type :
- 1 N-Channel
- Transistor Polarity :
- N-Channel
- Configuration :
- Single
- Published :
- 2012
- Drain-source On Resistance-Max :
- 17 Ω
- Power Dissipation-Max :
- 40W Tc
- Vgs (Max) :
- ±30V
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Base Product Number :
- IXTU05
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 40W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 1kV
- Continuous Drain Current (ID) :
- 750mA
- Supplier Device Package :
- TO-251
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- No
- Case Connection :
- DRAIN
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 1000V
- DS Breakdown Voltage-Min :
- 1000 V
- FET Feature :
- --
- Pin Count :
- 3
- Maximum Operating Temperature :
- + 150 C
- Rds On (Max) @ Id, Vgs :
- 17 Ω @ 375mA, 10V
- Product Category :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- THROUGH-HOLE
- Mounting Style :
- Through Hole
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Product Status :
- Active
- JEDEC-95 Code :
- TO-251
- JESD-30 Code :
- R-PSIP-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminals :
- 3
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXTU05N100
IXTU05N100 Documents

N-Channel Tube 17 Ω @ 375mA, 10V ±30V 260pF @ 25V 7.8nC @ 10V 1000V TO-251-3 Short Leads, IPak, TO-251AA
IXTU05N100 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 100 mJ.A device's maximal input capacitance is 260pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 750mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 3A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTU05N100 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 1kV voltage
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)
IXTU05N100 Applications
There are a lot of IXYS
IXTU05N100 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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