IXTU05N100
- Mfr.Part #
- IXTU05N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 750MA TO251
- Stock
- 35,645
- In Stock :
- 35,645
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Power Dissipation (Max) :
- 40W (Tc)
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXTU05
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Pin Count :
- 3
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 750mA Tc
- Number of Terminals :
- 3
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 3A
- Rds On (Max) @ Id, Vgs :
- 17 Ω @ 375mA, 10V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Manufacturer :
- IXYS
- Polarity/Channel Type :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 100 mJ
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Continuous Drain Current (ID) :
- 750mA
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max (Abs) :
- 40 W
- DS Breakdown Voltage-Min :
- 1000 V
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-251
- Product Type :
- MOSFET
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 40W
- Series :
- --
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 40W Tc
- RoHS :
- Details
- Package :
- Tube
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 17 Ω
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Active
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Drain to Source Voltage (Vdss) :
- 1000V
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-251
- Brand :
- IXYS
- Published :
- 2012
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 1kV
- Pbfree Code :
- yes
- Datasheets
- IXTU05N100
IXTU05N100 Documents

N-Channel Tube 17 Ω @ 375mA, 10V ±30V 260pF @ 25V 7.8nC @ 10V 1000V TO-251-3 Short Leads, IPak, TO-251AA
IXTU05N100 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 100 mJ.A device's maximal input capacitance is 260pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 750mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 3A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTU05N100 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 1kV voltage
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)
IXTU05N100 Applications
There are a lot of IXYS
IXTU05N100 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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