IXTU05N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

3A

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

40W Tc

Number of Elements :

1

ECCN Code :

EAR99

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Surface Mount :

No

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Reach Compliance Code :

Unknown

JEDEC-95 Code :

TO-251

RoHS Status :

ROHS3 Compliant

Series :

--

Transistor Application :

SWITCHING

Mounting Style :

Through Hole

Pin Count :

3

Number of Terminals :

3

DS Breakdown Voltage-Min :

1000 V

Qualification Status :

Not Qualified

Transistor Type :

1 N-Channel

Packaging :

Tube

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

40 W

Number of Terminations :

3

Minimum Operating Temperature :

- 55 C

Pbfree Code :

yes

Package :

Tube

Brand :

IXYS

Power Dissipation :

40W

Drain to Source Breakdown Voltage :

1kV

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSIP-T3

FET Feature :

--

Vgs (Max) :

±30V

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Product Number :

IXTU05

Product Category :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Gate to Source Voltage (Vgs) :

30V

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 150 C

Current - Continuous Drain (Id) @ 25°C :

750mA Tc

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

Element Configuration :

Single

Supplier Device Package :

TO-251

Product Status :

Active

Drain Current-Max (Abs) (ID) :

0.75A

Configuration :

Single

Drain-source On Resistance-Max :

17 Ω

Published :

2012

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Avalanche Energy Rating (Eas) :

100 mJ

Drain to Source Voltage (Vdss) :

1000V

Continuous Drain Current (ID) :

750mA

RoHS :

Details

Rds On (Max) @ Id, Vgs :

17 Ω @ 375mA, 10V

Power Dissipation (Max) :

40W (Tc)

FET Type :

N-Channel