IXTU05N100
- Mfr.Part #
- IXTU05N100
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 750MA TO251
- Stock
- 35,645
- In Stock :
- 35,645
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 3A
- Drain to Source Breakdown Voltage :
- 1kV
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Manufacturer :
- IXYS
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- ECCN Code :
- EAR99
- Supplier Device Package :
- TO-251
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 1000V
- Configuration :
- Single
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Power Dissipation-Max :
- 40W Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXTU05
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 10V
- Vgs (Max) :
- ±30V
- Published :
- 2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation :
- 40W
- Current - Continuous Drain (Id) @ 25°C :
- 750mA Tc
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Minimum Operating Temperature :
- - 55 C
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 1000 V
- Power Dissipation-Max (Abs) :
- 40 W
- JEDEC-95 Code :
- TO-251
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Reach Compliance Code :
- Unknown
- Continuous Drain Current (ID) :
- 750mA
- Drain-source On Resistance-Max :
- 17 Ω
- Surface Mount :
- No
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- FET Feature :
- --
- Power Dissipation (Max) :
- 40W (Tc)
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- --
- Maximum Operating Temperature :
- + 150 C
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 17 Ω @ 375mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Pbfree Code :
- yes
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXTU05N100
IXTU05N100 Documents

N-Channel Tube 17 Ω @ 375mA, 10V ±30V 260pF @ 25V 7.8nC @ 10V 1000V TO-251-3 Short Leads, IPak, TO-251AA
IXTU05N100 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 100 mJ.A device's maximal input capacitance is 260pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 750mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 3A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTU05N100 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 1kV voltage
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)
IXTU05N100 Applications
There are a lot of IXYS
IXTU05N100 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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