IXTU05N100

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Mfr.Part #
IXTU05N100
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 1000V 750MA TO251
Stock
35,645
In Stock :
35,645

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
260pF @ 25V
Power Dissipation (Max) :
40W (Tc)
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
7.8nC @ 10V
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Transistor Polarity :
N-Channel
Base Product Number :
IXTU05
Mount :
Through Hole
JESD-30 Code :
R-PSIP-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Element Configuration :
Single
Pin Count :
3
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
750mA Tc
Number of Terminals :
3
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
3A
Rds On (Max) @ Id, Vgs :
17 Ω @ 375mA, 10V
Mounting Type :
Through Hole
Number of Terminations :
3
Additional Feature :
AVALANCHE RATED
Reach Compliance Code :
Unknown
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Style :
Through Hole
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Avalanche Energy Rating (Eas) :
100 mJ
ECCN Code :
EAR99
Case Connection :
DRAIN
Surface Mount :
No
Continuous Drain Current (ID) :
750mA
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max (Abs) :
40 W
DS Breakdown Voltage-Min :
1000 V
FET Type :
N-Channel
Supplier Device Package :
TO-251
Product Type :
MOSFET
Qualification Status :
Not Qualified
Power Dissipation :
40W
Series :
--
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
40W Tc
RoHS :
Details
Package :
Tube
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
17 Ω
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Active
Drain Current-Max (Abs) (ID) :
0.75A
Drain to Source Voltage (Vdss) :
1000V
Number of Channels :
1 Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Packaging :
Tube
Vgs (Max) :
±30V
JEDEC-95 Code :
TO-251
Brand :
IXYS
Published :
2012
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Product Category :
MOSFET
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
1kV
Pbfree Code :
yes
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU05N100 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1 Channel, IXTU05N100 pinout, IXTU05N100 datasheet PDF, IXTU05N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU05N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU05N100


N-Channel Tube 17 Ω @ 375mA, 10V ±30V 260pF @ 25V 7.8nC @ 10V 1000V TO-251-3 Short Leads, IPak, TO-251AA

IXTU05N100 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 100 mJ.A device's maximal input capacitance is 260pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 750mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 3A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTU05N100 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 750mA
a drain-to-source breakdown voltage of 1kV voltage
based on its rated peak drain current 3A.
a 1000V drain to source voltage (Vdss)


IXTU05N100 Applications


There are a lot of IXYS
IXTU05N100 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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