IXTU01N80

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Mfr.Part #
IXTU01N80
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 100MA TO251
Stock
35,863
In Stock :
35,863

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
50 Ω @ 100mA, 10V
Base Product Number :
IXTU01
Supplier Device Package :
TO-251
Number of Elements :
1
Power Dissipation :
25W
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
RoHS Status :
ROHS3 Compliant
Package :
Tube
Drain Current-Max (Abs) (ID) :
0.1A
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Drain to Source Breakdown Voltage :
800V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Active
Fall Time (Typ) :
28 ns
Number of Pins :
3
Mount :
Through Hole
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
4.5V @ 25μA
ECCN Code :
EAR99
Manufacturer :
IXYS Corporation
Series :
--
Mounting Type :
Through Hole
Power Dissipation-Max :
25W Tc
Turn-Off Delay Time :
28 ns
DS Breakdown Voltage-Min :
800 V
Surface Mount :
No
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Drain-source On Resistance-Max :
50 Ω
Power Dissipation Ambient-Max :
25 W
JEDEC-95 Code :
TO-251AA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Feature :
--
Reach Compliance Code :
Compliant
Number of Terminations :
3
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
0.4A
Package Shape :
RECTANGULAR
Vgs (Max) :
±20V
JESD-30 Code :
R-PSIP-T3
Pin Count :
3
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation (Max) :
25W (Tc)
Pbfree Code :
yes
Terminal Position :
Single
HTS Code :
8541.29.00.95
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Power Dissipation-Max (Abs) :
25 W
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
800V
Rise Time :
12ns
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Published :
2003
Continuous Drain Current (ID) :
100mA
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXTU01N80 pinout, IXTU01N80 datasheet PDF, IXTU01N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU01N80


N-Channel Tube 50 Ω @ 100mA, 10V ±20V 60pF @ 25V 8nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA

IXTU01N80 Overview


The maximum input capacitance of this device is 60pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 0.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.4A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTU01N80 Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 800V drain to source voltage (Vdss)


IXTU01N80 Applications


There are a lot of IXYS
IXTU01N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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