IXTU01N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Packaging :

Tube

Transistor Element Material :

SILICON

Package :

Tube

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

100mA

Drain-source On Resistance-Max :

50 Ω

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Number of Terminals :

3

Power Dissipation (Max) :

25W (Tc)

Drain to Source Breakdown Voltage :

800V

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Pulsed Drain Current-Max (IDM) :

0.4A

Number of Terminations :

3

Product Status :

Active

Rds On (Max) @ Id, Vgs :

50 Ω @ 100mA, 10V

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation Ambient-Max :

25 W

Vgs (Max) :

±20V

Power Dissipation-Max :

25W Tc

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-251

Pin Count :

3

HTS Code :

8541.29.00.95

Published :

2003

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

100mA Tc

Rise Time :

12ns

Manufacturer :

IXYS Corporation

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-251AA

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Power Dissipation :

25W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Turn-Off Delay Time :

28 ns

Drain Current-Max (Abs) (ID) :

0.1A

Series :

--

Terminal Position :

Single

Base Product Number :

IXTU01

Vgs(th) (Max) @ Id :

4.5V @ 25μA

Fall Time (Typ) :

28 ns

Number of Pins :

3

Drain to Source Voltage (Vdss) :

800V

DS Breakdown Voltage-Min :

800 V

FET Type :

N-Channel

Power Dissipation-Max (Abs) :

25 W

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V