IXTU01N80
- Mfr.Part #
- IXTU01N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 100MA TO251
- Stock
- 35,863
- In Stock :
- 35,863
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 800V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Turn-Off Delay Time :
- 28 ns
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 0.4A
- FET Feature :
- --
- Manufacturer :
- IXYS Corporation
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 800 V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-251AA
- Surface Mount :
- No
- Power Dissipation-Max :
- 25W Tc
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max (Abs) :
- 25 W
- Power Dissipation (Max) :
- 25W (Tc)
- Mounting Type :
- Through Hole
- Package Shape :
- RECTANGULAR
- Power Dissipation Ambient-Max :
- 25 W
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Packaging :
- Tube
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Number of Terminals :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 25μA
- Continuous Drain Current (ID) :
- 100mA
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 50 Ω
- Rds On (Max) @ Id, Vgs :
- 50 Ω @ 100mA, 10V
- Fall Time (Typ) :
- 28 ns
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Supplier Device Package :
- TO-251
- Package :
- Tube
- Drain Current-Max (Abs) (ID) :
- 0.1A
- Series :
- --
- Power Dissipation :
- 25W
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 800V
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 12ns
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSIP-T3
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Base Product Number :
- IXTU01
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- HTS Code :
- 8541.29.00.95
- Published :
- 2003
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Datasheets
- IXTU01N80
IXTU01N80 Documents

N-Channel Tube 50 Ω @ 100mA, 10V ±20V 60pF @ 25V 8nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA
IXTU01N80 Overview
The maximum input capacitance of this device is 60pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 0.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.4A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTU01N80 Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 800V drain to source voltage (Vdss)
IXTU01N80 Applications
There are a lot of IXYS
IXTU01N80 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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