IXTU01N80

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Mfr.Part #
IXTU01N80
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 100MA TO251
Stock
35,863
In Stock :
35,863

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
IXYS Corporation
Pin Count :
3
Power Dissipation :
25W
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Power Dissipation Ambient-Max :
25 W
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
Package :
Tube
Rise Time :
12ns
Drain-source On Resistance-Max :
50 Ω
Element Configuration :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Number of Terminals :
3
FET Feature :
--
Turn-Off Delay Time :
28 ns
DS Breakdown Voltage-Min :
800 V
Drain to Source Voltage (Vdss) :
800V
Series :
--
Base Product Number :
IXTU01
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Power Dissipation-Max :
25W Tc
Terminal Form :
THROUGH-HOLE
JEDEC-95 Code :
TO-251AA
Rds On (Max) @ Id, Vgs :
50 Ω @ 100mA, 10V
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Number of Pins :
3
JESD-30 Code :
R-PSIP-T3
Supplier Device Package :
TO-251
Power Dissipation (Max) :
25W (Tc)
Fall Time (Typ) :
28 ns
Mount :
Through Hole
Published :
2003
Qualification Status :
Not Qualified
HTS Code :
8541.29.00.95
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
0.1A
Surface Mount :
No
Pulsed Drain Current-Max (IDM) :
0.4A
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Continuous Drain Current (ID) :
100mA
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
800V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation-Max (Abs) :
25 W
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, IXTU01N80 pinout, IXTU01N80 datasheet PDF, IXTU01N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU01N80


N-Channel Tube 50 Ω @ 100mA, 10V ±20V 60pF @ 25V 8nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA

IXTU01N80 Overview


The maximum input capacitance of this device is 60pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 0.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.4A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTU01N80 Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 800V drain to source voltage (Vdss)


IXTU01N80 Applications


There are a lot of IXYS
IXTU01N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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