IXTU01N80

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Mfr.Part #
IXTU01N80
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 100MA TO251
Stock
35,863
In Stock :
35,863

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Published :
2003
Continuous Drain Current (ID) :
100mA
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
800 V
Product Status :
Active
Mounting Type :
Through Hole
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
25 W
Transistor Application :
SWITCHING
Drain Current-Max (Abs) (ID) :
0.1A
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
800V
Pin Count :
3
Reach Compliance Code :
Compliant
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-251AA
Terminal Form :
THROUGH-HOLE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PSIP-T3
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Fall Time (Typ) :
28 ns
Number of Elements :
1
Drain to Source Breakdown Voltage :
800V
Series :
--
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
50 Ω
Package :
Tube
Surface Mount :
No
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
25W
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
FET Feature :
--
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Power Dissipation-Max :
25W Tc
Power Dissipation (Max) :
25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
FET Type :
N-Channel
HTS Code :
8541.29.00.95
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Manufacturer :
IXYS Corporation
Power Dissipation Ambient-Max :
25 W
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Supplier Device Package :
TO-251
Turn-Off Delay Time :
28 ns
Rds On (Max) @ Id, Vgs :
50 Ω @ 100mA, 10V
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Element Configuration :
Single
Rise Time :
12ns
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
0.4A
Base Product Number :
IXTU01
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXTU01N80 pinout, IXTU01N80 datasheet PDF, IXTU01N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU01N80


N-Channel Tube 50 Ω @ 100mA, 10V ±20V 60pF @ 25V 8nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA

IXTU01N80 Overview


The maximum input capacitance of this device is 60pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 0.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.4A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTU01N80 Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 800V drain to source voltage (Vdss)


IXTU01N80 Applications


There are a lot of IXYS
IXTU01N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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