IXTU01N80

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Mfr.Part #
IXTU01N80
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 100MA TO251
Stock
35,863
In Stock :
35,863

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Fall Time (Typ) :
28 ns
Base Product Number :
IXTU01
Mounting Type :
Through Hole
Surface Mount :
No
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
0.4A
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
25W (Tc)
JEDEC-95 Code :
TO-251AA
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Product Status :
Active
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
0.1A
Series :
--
Number of Terminals :
3
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Element Configuration :
Single
FET Feature :
--
Number of Pins :
3
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
25W Tc
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
800V
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Supplier Device Package :
TO-251
Reach Compliance Code :
Compliant
Power Dissipation-Max (Abs) :
25 W
Configuration :
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time :
28 ns
Mount :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
JESD-30 Code :
R-PSIP-T3
Manufacturer :
IXYS Corporation
Rds On (Max) @ Id, Vgs :
50 Ω @ 100mA, 10V
Drain-source On Resistance-Max :
50 Ω
Qualification Status :
Not Qualified
Drain to Source Breakdown Voltage :
800V
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
800 V
Power Dissipation Ambient-Max :
25 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Rise Time :
12ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
25W
Operating Temperature :
-55°C~150°C TJ
HTS Code :
8541.29.00.95
Continuous Drain Current (ID) :
100mA
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
Published :
2003
Package :
Tube
Pin Count :
3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXTU01N80 pinout, IXTU01N80 datasheet PDF, IXTU01N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU01N80


N-Channel Tube 50 Ω @ 100mA, 10V ±20V 60pF @ 25V 8nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA

IXTU01N80 Overview


The maximum input capacitance of this device is 60pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 0.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.4A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTU01N80 Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 800V drain to source voltage (Vdss)


IXTU01N80 Applications


There are a lot of IXYS
IXTU01N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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