IXTU01N80

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Mfr.Part #
IXTU01N80
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 100MA TO251
Stock
35,863
In Stock :
35,863

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
800V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
28 ns
Product Status :
Active
Pulsed Drain Current-Max (IDM) :
0.4A
FET Feature :
--
Manufacturer :
IXYS Corporation
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
DS Breakdown Voltage-Min :
800 V
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-251AA
Surface Mount :
No
Power Dissipation-Max :
25W Tc
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max (Abs) :
25 W
Power Dissipation (Max) :
25W (Tc)
Mounting Type :
Through Hole
Package Shape :
RECTANGULAR
Power Dissipation Ambient-Max :
25 W
Qualification Status :
Not Qualified
Terminal Position :
Single
Packaging :
Tube
Number of Terminations :
3
Mount :
Through Hole
Vgs (Max) :
±20V
Number of Terminals :
3
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Continuous Drain Current (ID) :
100mA
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
50 Ω
Rds On (Max) @ Id, Vgs :
50 Ω @ 100mA, 10V
Fall Time (Typ) :
28 ns
Number of Pins :
3
Pbfree Code :
yes
Supplier Device Package :
TO-251
Package :
Tube
Drain Current-Max (Abs) (ID) :
0.1A
Series :
--
Power Dissipation :
25W
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Drain to Source Voltage (Vdss) :
800V
Polarity/Channel Type :
N-Channel
Rise Time :
12ns
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSIP-T3
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Base Product Number :
IXTU01
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
HTS Code :
8541.29.00.95
Published :
2003
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:-55°C~150°C TJ, IXTU01N80 pinout, IXTU01N80 datasheet PDF, IXTU01N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU01N80


N-Channel Tube 50 Ω @ 100mA, 10V ±20V 60pF @ 25V 8nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA

IXTU01N80 Overview


The maximum input capacitance of this device is 60pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 0.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.4A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTU01N80 Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 800V drain to source voltage (Vdss)


IXTU01N80 Applications


There are a lot of IXYS
IXTU01N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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