IXTU01N80

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Mfr.Part #
IXTU01N80
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 100MA TO251
Stock
35,863
In Stock :
35,863

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXTU01
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Power Dissipation (Max) :
25W (Tc)
Package :
Tube
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
50 Ω @ 100mA, 10V
Power Dissipation :
25W
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
JESD-30 Code :
R-PSIP-T3
Series :
--
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
800 V
Continuous Drain Current (ID) :
100mA
FET Feature :
--
Turn-Off Delay Time :
28 ns
Element Configuration :
Single
Power Dissipation-Max :
25W Tc
Fall Time (Typ) :
28 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4.5V @ 25μA
HTS Code :
8541.29.00.95
Rise Time :
12ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Drain Current-Max (Abs) (ID) :
0.1A
Number of Terminals :
3
Number of Elements :
1
Packaging :
Tube
Terminal Position :
Single
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max (Abs) :
25 W
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
THROUGH-HOLE
Product Status :
Active
Number of Terminations :
3
JEDEC-95 Code :
TO-251AA
Supplier Device Package :
TO-251
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
800V
Vgs (Max) :
±20V
Number of Pins :
3
Published :
2003
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Manufacturer :
IXYS Corporation
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Pulsed Drain Current-Max (IDM) :
0.4A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
800V
Mounting Type :
Through Hole
Power Dissipation Ambient-Max :
25 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Drain-source On Resistance-Max :
50 Ω
Pin Count :
3
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, IXTU01N80 pinout, IXTU01N80 datasheet PDF, IXTU01N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU01N80


N-Channel Tube 50 Ω @ 100mA, 10V ±20V 60pF @ 25V 8nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA

IXTU01N80 Overview


The maximum input capacitance of this device is 60pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 0.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.4A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTU01N80 Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 800V drain to source voltage (Vdss)


IXTU01N80 Applications


There are a lot of IXYS
IXTU01N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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