IXTU01N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

25W

Base Product Number :

IXTU01

Number of Terminations :

3

Power Dissipation (Max) :

25W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Continuous Drain Current (ID) :

100mA

ECCN Code :

EAR99

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

Compliant

Fall Time (Typ) :

28 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

100mA Tc

JESD-30 Code :

R-PSIP-T3

Package Shape :

RECTANGULAR

Rise Time :

12ns

Surface Mount :

No

Qualification Status :

Not Qualified

Supplier Device Package :

TO-251

Terminal Form :

THROUGH-HOLE

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

800 V

Rds On (Max) @ Id, Vgs :

50 Ω @ 100mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

Power Dissipation Ambient-Max :

25 W

Number of Terminals :

3

Published :

2003

Manufacturer :

IXYS Corporation

JEDEC-95 Code :

TO-251AA

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Series :

--

Drain-source On Resistance-Max :

50 Ω

FET Type :

N-Channel

Power Dissipation-Max (Abs) :

25 W

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 25μA

Pulsed Drain Current-Max (IDM) :

0.4A

Drain to Source Breakdown Voltage :

800V

HTS Code :

8541.29.00.95

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.1A

Packaging :

Tube

Drain to Source Voltage (Vdss) :

800V

Turn-Off Delay Time :

28 ns

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

25W Tc

Transistor Element Material :

SILICON

Product Status :

Active

Number of Pins :

3

Number of Elements :

1

Transistor Application :

SWITCHING