IXTU01N80
- Mfr.Part #
- IXTU01N80
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 100MA TO251
- Stock
- 35,863
- In Stock :
- 35,863
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- HTS Code :
- 8541.29.00.95
- Surface Mount :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-251AA
- Power Dissipation Ambient-Max :
- 25 W
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 100mA
- Package Shape :
- RECTANGULAR
- Vgs (Max) :
- ±20V
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 50 Ω
- Rds On (Max) @ Id, Vgs :
- 50 Ω @ 100mA, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation (Max) :
- 25W (Tc)
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- --
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 25 W
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- Terminal Position :
- Single
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- JESD-30 Code :
- R-PSIP-T3
- Fall Time (Typ) :
- 28 ns
- Power Dissipation-Max :
- 25W Tc
- Product Status :
- Active
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 800V
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Manufacturer :
- IXYS Corporation
- Polarity/Channel Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2003
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 0.1A
- Turn-Off Delay Time :
- 28 ns
- Power Dissipation :
- 25W
- Vgs(th) (Max) @ Id :
- 4.5V @ 25μA
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 0.4A
- Base Product Number :
- IXTU01
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 12ns
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 800 V
- Drain to Source Voltage (Vdss) :
- 800V
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Series :
- --
- Number of Pins :
- 3
- Supplier Device Package :
- TO-251
- Mount :
- Through Hole
- Datasheets
- IXTU01N80
IXTU01N80 Documents

N-Channel Tube 50 Ω @ 100mA, 10V ±20V 60pF @ 25V 8nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA
IXTU01N80 Overview
The maximum input capacitance of this device is 60pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 0.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.4A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTU01N80 Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 800V drain to source voltage (Vdss)
IXTU01N80 Applications
There are a lot of IXYS
IXTU01N80 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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