IXTU01N80

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Mfr.Part #
IXTU01N80
Manufacturer
Littelfuse
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 100MA TO251
Stock
35,863
In Stock :
35,863

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
HTS Code :
8541.29.00.95
Surface Mount :
No
Configuration :
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code :
TO-251AA
Power Dissipation Ambient-Max :
25 W
Number of Elements :
1
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
100mA
Package Shape :
RECTANGULAR
Vgs (Max) :
±20V
Number of Terminals :
3
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
50 Ω
Rds On (Max) @ Id, Vgs :
50 Ω @ 100mA, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
25W (Tc)
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
FET Feature :
--
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
25 W
Input Capacitance (Ciss) (Max) @ Vds :
60pF @ 25V
Terminal Position :
Single
Reach Compliance Code :
Compliant
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
JESD-30 Code :
R-PSIP-T3
Fall Time (Typ) :
28 ns
Power Dissipation-Max :
25W Tc
Product Status :
Active
Package :
Tube
Drain to Source Breakdown Voltage :
800V
FET Type :
N-Channel
Pbfree Code :
yes
Manufacturer :
IXYS Corporation
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2003
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Case Connection :
DRAIN
Drain Current-Max (Abs) (ID) :
0.1A
Turn-Off Delay Time :
28 ns
Power Dissipation :
25W
Vgs(th) (Max) @ Id :
4.5V @ 25μA
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
0.4A
Base Product Number :
IXTU01
Gate to Source Voltage (Vgs) :
20V
Rise Time :
12ns
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
ECCN Code :
EAR99
DS Breakdown Voltage-Min :
800 V
Drain to Source Voltage (Vdss) :
800V
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Element Configuration :
Single
Number of Terminations :
3
Series :
--
Number of Pins :
3
Supplier Device Package :
TO-251
Mount :
Through Hole
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Terminations:3, Number of Pins:3, IXTU01N80 pinout, IXTU01N80 datasheet PDF, IXTU01N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTU01N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTU01N80


N-Channel Tube 50 Ω @ 100mA, 10V ±20V 60pF @ 25V 8nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA

IXTU01N80 Overview


The maximum input capacitance of this device is 60pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 0.1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 28 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.4A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTU01N80 Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 0.4A.
a 800V drain to source voltage (Vdss)


IXTU01N80 Applications


There are a lot of IXYS
IXTU01N80 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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