IXTU12N06T
- Mfr.Part #
- IXTU12N06T
- Manufacturer
- Littelfuse
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12A TO251
- Stock
- 16,724
- In Stock :
- 16,724
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 12 A
- Base Product Number :
- IXTU12
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 60V
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Supplier Device Package :
- TO-251
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 6A, 10V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Product Status :
- Active
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 3.4nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Style :
- Through Hole
- Package :
- Tube
- Mount :
- Through Hole
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Product Category :
- MOSFET
- Power Dissipation (Max) :
- 33W (Tc)
- Product Type :
- MOSFET
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Continuous Drain Current (ID) :
- 12A
- Input Capacitance (Ciss) (Max) @ Vds :
- 256pF @ 25V
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-251AA
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max (Abs) :
- 33 W
- FET Type :
- N-Channel
- RoHS :
- Details
- JESD-30 Code :
- R-PSIP-T3
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 25μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Unknown
- Drain-source On Resistance-Max :
- 0.085Ohm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- TrenchMV™
- Pulsed Drain Current-Max (IDM) :
- 30A
- Brand :
- IXYS
- Number of Terminals :
- 3
- Published :
- 2008
- Pbfree Code :
- yes
- Tradename :
- HiPerFET
- Power Dissipation-Max :
- 33W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXTU12N06T

N-Channel Tube 85m Ω @ 6A, 10V ±20V 256pF @ 25V 3.4nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA
IXTU12N06T Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 20 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 256pF @ 25V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 12 A.Pulsed drain current is maximum rated peak drain current 30A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTU12N06T Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 12A
based on its rated peak drain current 30A.
a 60V drain to source voltage (Vdss)
IXTU12N06T Applications
There are a lot of IXYS
IXTU12N06T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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