IXTU12N06T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

IXYS

Number of Terminals :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Power Dissipation-Max (Abs) :

33 W

Power Dissipation (Max) :

33W (Tc)

JEDEC-95 Code :

TO-251AA

Rds On (Max) @ Id, Vgs :

85m Ω @ 6A, 10V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Through Hole

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Drain-source On Resistance-Max :

0.085Ohm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Package :

Tube

DS Breakdown Voltage-Min :

60V

Product Category :

MOSFET

Continuous Drain Current (ID) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

256pF @ 25V

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Tradename :

HiPerFET

JESD-30 Code :

R-PSIP-T3

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

IXYS

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

Series :

TrenchMV™

Qualification Status :

Not Qualified

Power Dissipation-Max :

33W Tc

Product Status :

Active

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

30A

Vgs (Max) :

±20V

Number of Elements :

1

Package Shape :

RECTANGULAR

Number of Terminations :

3

Case Connection :

DRAIN

Supplier Device Package :

TO-251

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Transistor Application :

SWITCHING

Pbfree Code :

yes

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 10V

Terminal Form :

THROUGH-HOLE

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Base Product Number :

IXTU12

Avalanche Energy Rating (Eas) :

20 mJ

Vgs(th) (Max) @ Id :

4V @ 25μA

Product Type :

MOSFET

Mounting Style :

Through Hole

Drain Current-Max (Abs) (ID) :

12 A

Terminal Position :

Single

RoHS :

Details

FET Technology :

METAL-OXIDE SEMICONDUCTOR