IXGP30N120B3
- Mfr.Part #
- IXGP30N120B3
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 1200V 60A 300W TO220
- Stock
- 9
- In Stock :
- 9
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Product Status :
- Active
- Power - Max :
- 300W
- Current - Collector (Ic) (Max) :
- 60A
- Mounting Style :
- Through Hole
- Max Collector Current :
- 60A
- Input Type :
- Standard
- Series :
- GenX3™
- Mount :
- Through Hole
- Pin Count :
- 3
- Weight :
- 2.299997g
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 3.5V
- Turn On Time :
- 56 ns
- Reach Compliance Code :
- Unknown
- Gate Charge :
- 87nC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate-Emitter Thr Voltage-Max :
- 5V
- Terminal Position :
- Single
- Package / Case :
- TO-220-3
- Turn Off Time-Nom (toff) :
- 471 ns
- RoHS :
- Details
- Configuration :
- Single
- Current - Collector Pulsed (Icm) :
- 150A
- Factory Lead Time :
- 26 Weeks
- Number of Pins :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Min Operating Temperature :
- -55 °C
- Collector Emitter Voltage (VCEO) :
- 3.5V
- Test Condition :
- 960V, 30A, 5 Ω, 15V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Additional Feature :
- LOW CONDUCTION LOSS
- IGBT Type :
- PT
- Max Power Dissipation :
- 300W
- REACH SVHC :
- No SVHC
- Switching Energy :
- 3.47mJ (on), 2.16mJ (off)
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- IXG*30N120
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Brand :
- IXYS
- Package :
- Tube
- ECCN Code :
- EAR99
- Maximum Operating Temperature :
- + 150 C
- Packaging :
- Tube
- Transistor Application :
- POWER CONTROL
- Technology :
- Si
- Product Type :
- IGBT Transistors
- JESD-609 Code :
- e3
- Published :
- 2009
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Td (on/off) @ 25°C :
- 16ns/127ns
- Base Product Number :
- IXGP30
- Vce(on) (Max) @ Vge, Ic :
- 3.5V @ 15V, 30A
- Pbfree Code :
- yes
- Max Operating Temperature :
- 150 °C
- Product Category :
- IGBT Transistors
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-220AB
- Gate-Emitter Voltage-Max :
- 20V
- Manufacturer :
- IXYS
- Datasheets
- IXGP30N120B3

IXGP30N120B3 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
IXGP30N120B3 Description
PT IGBTs, which are fabricated using epitaxial wafers, have a thick p+ collector region with high dopant concentration. In the conducting state, large amounts of carriers are injected from the collector to achieve conductivity modulation and thereby reduce the on-state voltage.
IXGP30N120B3 Applications
• PLC analog input modules
• Weigh scales and strain-gauge digitizers
• Temperature, pressure measurement
• Lab instrumentation
• Process analytics
IXGP30N120B3 Features
• High input voltage (AC187 - 528V)
• Peak load possible
FCA50F, FCA75F (at AC240 - 528V)
FCA200F (at AC323 - 528V)
• Harmonic attenuator (Complies with IEC61000-3-2) (FCA200F)
• DIN rail attachment (Optional)
• Small size
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