IXGP15N120B
- Mfr.Part #
- IXGP15N120B
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 1200V 30A 150W TO220AB
- Stock
- 8,207
- In Stock :
- 8,207
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Vce(on) (Max) @ Vge, Ic :
- 3.2V @ 15V, 15A
- JEDEC-95 Code :
- TO-220AB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Number of Pins :
- 3
- Max Power Dissipation :
- 150W
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- IGBT Type :
- PT
- Packaging :
- Tube
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 150 W
- Series :
- HiPerFAST™
- Base Part Number :
- IXG*15N120
- Switching Energy :
- 1.75mJ (off)
- Base Product Number :
- IXGP15
- Td (on/off) @ 25°C :
- 25ns/180ns
- Product Status :
- Active
- Supplier Device Package :
- TO-220AB
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Transistor Application :
- POWER CONTROL
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Collector Current-Max (IC) :
- 30 A
- Package Shape :
- RECTANGULAR
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS Corporation
- Current - Collector Pulsed (Icm) :
- 60A
- Number of Terminals :
- 3
- Configuration :
- Single
- Turn On Time :
- 43 ns
- Gate-Emitter Thr Voltage-Max :
- 5V
- Weight :
- 2.299997g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time-Max (tf) :
- 320 ns
- RoHS Status :
- ROHS3 Compliant
- Turn Off Time-Nom (toff) :
- 660 ns
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Collector Emitter Saturation Voltage :
- 3.2V
- Input Type :
- Standard
- Max Collector Current :
- 30A
- JESD-30 Code :
- R-PSFM-T3
- Reach Compliance Code :
- Compliant
- Gate Charge :
- 69nC
- Collector-Emitter Voltage-Max :
- 1200 V
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- THROUGH-HOLE
- Test Condition :
- 960V, 15A, 10 Ω, 15V
- Gate-Emitter Voltage-Max :
- 20V
- Current - Collector (Ic) (Max) :
- 30A
- Surface Mount :
- No
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Published :
- 2000
- Factory Lead Time :
- 8 Weeks
- Power - Max :
- 150W
- Datasheets
- IXGP15N120B

IXGP15N120B datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
IXGP15N120B Description
PT IGBTs, which are fabricated using epitaxial wafers, have a thick p+ collector region with high dopant concentration. In the conducting state, large amounts of carriers are injected from the collector to achieve conductivity modulation and thereby reduce the on-state voltage.
IXGP15N120B Applications
• PLC analog input modules
• Weigh scales and strain-gauge digitizers
• Temperature, pressure measurement
• Lab instrumentation
• Process analytics
IXGP15N120B Features
• High input voltage (AC187 - 528V)
• Peak load possible
FCA50F, FCA75F (at AC240 - 528V)
FCA200F (at AC323 - 528V)
• Harmonic attenuator (Complies with IEC61000-3-2) (FCA200F)
• DIN rail attachment (Optional)
• Small size
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