IXGP12N120A3
- Mfr.Part #
- IXGP12N120A3
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 1200V 22A 100W TO220
- Stock
- 38
- In Stock :
- 38
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Max Power Dissipation :
- 100W
- Transistor Element Material :
- SILICON
- Turn On Time :
- 202 ns
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- IGBT Modules
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-220AB
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 3
- Current - Collector Pulsed (Icm) :
- 60A
- RoHS Status :
- ROHS3 Compliant
- Collector Current-Max (IC) :
- 22 A
- IGBT Type :
- PT
- Surface Mount :
- No
- Base Product Number :
- IXGP12
- Packaging :
- Tube
- Case Connection :
- COLLECTOR
- Mounting Style :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Current - Collector (Ic) (Max) :
- 22A
- Terminal Form :
- THROUGH-HOLE
- Turn Off Time-Nom (toff) :
- 1545 ns
- Vce(on) (Max) @ Vge, Ic :
- 3V @ 15V, 12A
- Reach Compliance Code :
- Unknown
- Technology :
- Si
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 3V
- Package :
- Tube
- Collector-Emitter Voltage-Max :
- 1200 V
- Td (on/off) @ 25°C :
- --
- Additional Feature :
- LOW CONDUCTION LOSS
- Max Collector Current :
- 22A
- Series :
- GenX3™
- Product Status :
- Active
- Gate-Emitter Voltage-Max :
- 20V
- JEDEC-95 Code :
- TO-220AB
- Input Type :
- Standard
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 3
- RoHS :
- Details
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- POWER CONTROL
- Test Condition :
- --
- Factory Lead Time :
- 30 Weeks
- Switching Energy :
- --
- Manufacturer :
- IXYS
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Gate-Emitter Thr Voltage-Max :
- 5V
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3
- Gate Charge :
- 20.4nC
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Number of Elements :
- 1
- Published :
- 2010
- Power Dissipation-Max (Abs) :
- 100 W
- Product :
- IGBT Silicon Modules
- Product Category :
- IGBT Modules
- Power - Max :
- 100W
- Brand :
- IXYS
- Configuration :
- Single
- Datasheets
- IXGP12N120A3

IXGP12N120A3 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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