IXGP12N120A3

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Product Status :

Active

Transistor Element Material :

SILICON

Test Condition :

--

Voltage - Collector Emitter Breakdown (Max) :

1200V

Mounting Type :

Through Hole

Technology :

Si

Base Product Number :

IXGP12

Additional Feature :

LOW CONDUCTION LOSS

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 12A

Mount :

Through Hole

Td (on/off) @ 25°C :

--

Configuration :

Single

Series :

GenX3™

Collector-Emitter Voltage-Max :

1200 V

RoHS :

Details

Terminal Position :

Single

Transistor Application :

POWER CONTROL

JEDEC-95 Code :

TO-220AB

Max Collector Current :

22A

Brand :

IXYS

JESD-30 Code :

R-PSFM-T3

Product :

IGBT Silicon Modules

Collector Emitter Voltage (VCEO) :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Minimum Operating Temperature :

- 55 C

Package :

Tube

Factory Lead Time :

30 Weeks

Turn Off Time-Nom (toff) :

1545 ns

Switching Energy :

--

Power - Max :

100W

Case Connection :

COLLECTOR

Power Dissipation-Max (Abs) :

100 W

Number of Terminals :

3

Number of Elements :

1

Packaging :

Tube

Collector Current-Max (IC) :

22 A

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

Current - Collector (Ic) (Max) :

22A

Package / Case :

TO-220-3

Surface Mount :

No

Supplier Device Package :

TO-220AB

Terminal Form :

THROUGH-HOLE

Published :

2010

Gate-Emitter Voltage-Max :

20V

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+ 150 C

Collector Emitter Breakdown Voltage :

1.2kV

Input Type :

Standard

Product Category :

IGBT Modules

Turn On Time :

202 ns

Pin Count :

3

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Through Hole

Gate Charge :

20.4nC

Product Type :

IGBT Modules

Max Power Dissipation :

100W

Gate-Emitter Thr Voltage-Max :

5V

Reach Compliance Code :

Unknown

IGBT Type :

PT

Current - Collector Pulsed (Icm) :

60A