IXGP12N120A3

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Terminal Form :

THROUGH-HOLE

Transistor Application :

POWER CONTROL

Packaging :

Tube

Mounting Style :

Through Hole

Series :

GenX3™

Collector-Emitter Voltage-Max :

1200 V

Package / Case :

TO-220-3

Package Shape :

RECTANGULAR

Technology :

Si

Published :

2010

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Max Power Dissipation :

100W

Additional Feature :

LOW CONDUCTION LOSS

Brand :

IXYS

Gate-Emitter Thr Voltage-Max :

5V

Reach Compliance Code :

Unknown

Product Category :

IGBT Modules

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Switching Energy :

--

Base Product Number :

IXGP12

Test Condition :

--

Gate Charge :

20.4nC

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Product :

IGBT Silicon Modules

RoHS :

Details

Power - Max :

100W

Current - Collector (Ic) (Max) :

22A

Product Status :

Active

Number of Elements :

1

Turn On Time :

202 ns

Max Collector Current :

22A

Pin Count :

3

Turn Off Time-Nom (toff) :

1545 ns

Package :

Tube

Collector Current-Max (IC) :

22 A

Maximum Operating Temperature :

+ 150 C

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

Product Type :

IGBT Modules

Number of Terminations :

3

Current - Collector Pulsed (Icm) :

60A

IGBT Type :

PT

Terminal Position :

Single

Factory Lead Time :

30 Weeks

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

1.2kV

Number of Terminals :

3

Input Type :

Standard

Supplier Device Package :

TO-220AB

Configuration :

Single

Power Dissipation-Max (Abs) :

100 W

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Manufacturer :

IXYS

Surface Mount :

No

Voltage - Collector Emitter Breakdown (Max) :

1200V

Td (on/off) @ 25°C :

--

Collector Emitter Voltage (VCEO) :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 12A