IXGH45N120

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Product Status :

Active

Surface Mount :

No

Base Product Number :

IXGH45

Configuration :

Single

Package / Case :

TO-247-3

Power - Max :

300W

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

POWER CONTROL

Fall Time-Max (tf) :

700ns

Max Power Dissipation :

300W

Collector Emitter Breakdown Voltage :

1.2kV

Test Condition :

960V, 45A, 5 Ω, 15V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Number of Elements :

1

Reach Compliance Code :

Compliant

Terminal Position :

Single

Package :

Bulk

Rise Time :

28ns

Lead Free :

Lead Free

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 45A

Input Type :

Standard

Pbfree Code :

yes

Current Rating :

75A

Gate-Emitter Voltage-Max :

20V

Gate Charge :

170nC

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Published :

2001

Factory Lead Time :

8 Weeks

Element Configuration :

Single

Pin Count :

3

Collector Current-Max (IC) :

75 A

Series :

--

Number of Terminals :

3

Max Collector Current :

75A

Switching Energy :

14mJ (off)

Manufacturer :

IXYS Corporation

Td (on/off) @ 25°C :

55ns/370ns

Turn Off Time-Nom (toff) :

1400 ns

Turn On Time :

96 ns

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

300 W

Packaging :

Bulk

Power Dissipation :

300W

Gate-Emitter Thr Voltage-Max :

5V

IGBT Type :

--

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

TO-247AD (IXGH)

Current - Collector Pulsed (Icm) :

180A

Collector-Emitter Voltage-Max :

1200 V

Collector Emitter Voltage (VCEO) :

1.2kV

Voltage - Rated DC :

1.2kV

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Terminal Form :

THROUGH-HOLE

Number of Terminations :

3

Package Shape :

RECTANGULAR

Current - Collector (Ic) (Max) :

75A

JEDEC-95 Code :

TO-247AD

Weight :

6.500007g

Transistor Element Material :

SILICON