IXGH10N170

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Product Status :

Active

Supplier Device Package :

TO-247AD (IXGH)

Configuration :

Single

JEDEC-95 Code :

TO-247AD

Pbfree Code :

yes

Maximum Operating Temperature :

+ 150 C

Factory Lead Time :

17 Weeks

Brand :

IXYS

Voltage - Collector Emitter Breakdown (Max) :

1700V

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

JESD-609 Code :

e1

RoHS :

Details

Lead Free :

Lead Free

Product Category :

IGBT Transistors

Weight :

6.500007g

Number of Elements :

1

Reach Compliance Code :

Compliant

Turn On Delay Time :

45 ns

Manufacturer :

IXYS

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Collector Current :

20A

Minimum Operating Temperature :

- 55 C

Series :

--

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

4V @ 15V, 10A

Width :

5.3 mm

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

110 W

Product Type :

IGBT Transistors

Terminal Form :

THROUGH-HOLE

Td (on/off) @ 25°C :

--

Test Condition :

--

Number of Terminations :

3

Package :

Tube

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

200 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Surface Mount :

No

Collector Emitter Breakdown Voltage :

1.7kV

Current - Collector Pulsed (Icm) :

70A

Gate-Emitter Voltage-Max :

20V

Number of Pins :

3

Turn On Time :

300 ns

RoHS Status :

ROHS3 Compliant

Base Part Number :

IXG*10N170

Case Connection :

COLLECTOR

Number of Terminals :

3

Input Type :

Standard

Current - Collector (Ic) (Max) :

20A

Collector-Emitter Voltage-Max :

1700 V

Packaging :

Tube

Power - Max :

110W

Height :

21.46 mm

Technology :

Si

Base Product Number :

IXGH10

Pin Count :

3

Collector Current-Max (IC) :

20 A

Turn Off Time-Nom (toff) :

630 ns

Transistor Application :

POWER CONTROL

Gate Charge :

32nC

Collector Emitter Voltage (VCEO) :

1.7kV

IGBT Type :

NPT

Max Power Dissipation :

110W

Polarity/Channel Type :

N-Channel

Switching Energy :

--

Length :

16.26 mm

Gate-Emitter Thr Voltage-Max :

5V

Terminal Position :

Single

Transistor Element Material :

SILICON

Mounting Style :

Through Hole