IXFX98N50P3
- Mfr.Part #
- IXFX98N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 98A PLUS247-3
- Stock
- 298
- In Stock :
- 298
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current Id :
- 98A
- Number of Elements :
- 1
- Product Type :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 197nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Power (max) P(TOT) :
- 1300W
- Drain-source On Resistance-Max :
- 0.05Ohm
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Reach Compliance Code :
- Unknown
- Manufacturer :
- IXYS
- Channel Type :
- N
- Package / Case :
- TO-247-3
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification :
- -
- Supplier Device Package :
- PLUS247™-3
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Polarity :
- N-Channel
- Power Dissipation (Max) :
- 1300W (Tc)
- Factory Lead Time :
- 30 Weeks
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 1.3kW
- FET Feature :
- --
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 245A
- Channels :
- 1
- Lead Free :
- Lead Free
- Manuf. code :
- IXY
- Mount :
- Through Hole
- Power Dissipation-Max :
- 1300W Tc
- Product Status :
- Active
- ECCN Code :
- EAR99
- Base Product Number :
- IXFX98
- Packaging :
- Tube
- Minimum Operating Temperature :
- -55 °C
- Tradename :
- HiPerFET
- Current - Continuous Drain (Id) @ 25°C :
- 98A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 500mA, 10V
- Transistor Type :
- 1 N-Channel
- Turn-Off Delay Time :
- 65 ns
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- +150 °C
- Input Capacitance (Ciss) (Max) @ Vds :
- 13100pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Number of Elements per Chip :
- 1
- RoHS :
- Details
- Number of Pins :
- 247
- Enclosure :
- PLUS 247 3
- Rise Time :
- 8ns
- JESD-30 Code :
- R-PSIP-T3
- Transistor Element Material :
- SILICON
- Max. operating temperature :
- +150°C
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Width :
- 5.21mm
- Channel Mode :
- Enhancement
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Mounting Style :
- Through Hole
- Turn On Delay Time :
- 35 ns
- Qualification Status :
- Not Qualified
- MSL :
- MSL 1 - Unlimited
- Drain to Source Voltage (Vdss) :
- 500V
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 21.34mm
- Series :
- HiPerFET™, Polar3™
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 6 ns
- Length :
- 16.13mm
- Type :
- N-Channel
- Package Type :
- PLUS247
- Content :
- 1pc(s)
- Published :
- 2005
- Product Category :
- MOSFET
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 98A
- Datasheets
- IXFX98N50P3
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N-Channel Tube 50m Ω @ 500mA, 10V ±30V 13100pF @ 25V 197nC @ 10V 500V TO-247-3
IXFX98N50P3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 13100pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 98A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [65 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 245A.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFX98N50P3 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 98A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 245A.
a 500V drain to source voltage (Vdss)
IXFX98N50P3 Applications
There are a lot of IXYS
IXFX98N50P3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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