IXFX98N50P3

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Mfr.Part #
IXFX98N50P3
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 98A PLUS247-3
Stock
298
In Stock :
298

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Continuous Drain Current Id :
98A
Number of Elements :
1
Product Type :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
197nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Power (max) P(TOT) :
1300W
Drain-source On Resistance-Max :
0.05Ohm
Number of Terminations :
3
Additional Feature :
AVALANCHE RATED
Element Configuration :
Single
Mounting Type :
Through Hole
Brand :
IXYS
Reach Compliance Code :
Unknown
Manufacturer :
IXYS
Channel Type :
N
Package / Case :
TO-247-3
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification :
-
Supplier Device Package :
PLUS247™-3
Drain to Source Breakdown Voltage :
500V
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
1300W (Tc)
Factory Lead Time :
30 Weeks
Number of Channels :
1 Channel
Power Dissipation :
1.3kW
FET Feature :
--
Pin Count :
3
Pulsed Drain Current-Max (IDM) :
245A
Channels :
1
Lead Free :
Lead Free
Manuf. code :
IXY
Mount :
Through Hole
Power Dissipation-Max :
1300W Tc
Product Status :
Active
ECCN Code :
EAR99
Base Product Number :
IXFX98
Packaging :
Tube
Minimum Operating Temperature :
-55 °C
Tradename :
HiPerFET
Current - Continuous Drain (Id) @ 25°C :
98A Tc
Vgs(th) (Max) @ Id :
5V @ 8mA
Rds On (Max) @ Id, Vgs :
50m Ω @ 500mA, 10V
Transistor Type :
1 N-Channel
Turn-Off Delay Time :
65 ns
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+150 °C
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Number of Elements per Chip :
1
RoHS :
Details
Number of Pins :
247
Enclosure :
PLUS 247 3
Rise Time :
8ns
JESD-30 Code :
R-PSIP-T3
Transistor Element Material :
SILICON
Max. operating temperature :
+150°C
Case Connection :
DRAIN
FET Type :
N-Channel
Width :
5.21mm
Channel Mode :
Enhancement
Avalanche Energy Rating (Eas) :
2000 mJ
Mounting Style :
Through Hole
Turn On Delay Time :
35 ns
Qualification Status :
Not Qualified
MSL :
MSL 1 - Unlimited
Drain to Source Voltage (Vdss) :
500V
Operating Temperature :
-55°C~150°C TJ
Height :
21.34mm
Series :
HiPerFET™, Polar3™
Vgs (Max) :
±30V
Fall Time (Typ) :
6 ns
Length :
16.13mm
Type :
N-Channel
Package Type :
PLUS247
Content :
1pc(s)
Published :
2005
Product Category :
MOSFET
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
98A
Datasheets
IXFX98N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX98N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Channels:1 Channel, Number of Pins:247, Operating Temperature:-55°C~150°C TJ, Type:N-Channel, IXFX98N50P3 pinout, IXFX98N50P3 datasheet PDF, IXFX98N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX98N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX98N50P3


N-Channel Tube 50m Ω @ 500mA, 10V ±30V 13100pF @ 25V 197nC @ 10V 500V TO-247-3

IXFX98N50P3 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 13100pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 98A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [65 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 245A.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFX98N50P3 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 98A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 245A.
a 500V drain to source voltage (Vdss)


IXFX98N50P3 Applications


There are a lot of IXYS
IXFX98N50P3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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